1. Investigation
of the plasma uniformity in an internal
linear antenna-type inductively coupled
plasma source by applying dual frequency
G.H. Gweon, J.H. Lim, K.N. Kim, S.P. Hong,
T.H. Min and G,Y.Yeom
Vacuum 84 (2010) January 823-827 PDF
file
International Publications 2009
1. Line-type inductively
coupled plasma source with ferromagnetic module
J.H. Lim, K.N. Kim, G.H. Gweon and G.Y. Yeom
J. Phys. D: Appl. Phys. 42 (2009) January
015204(5pp) PDF
file
2. Neutralization
efficiency estimation in a neutral beam
source based on inductively coupled plasma
O.V.Vozniy and G.Y. Yeom
JOURNAL OF APPLIED PHYSICS 105 (2009) January
013308(7pp) PDF
file
3. Atomic layer
etching of ultra-thin HfO2
film for gate oxide in MOSFET devices
J.B. Park, W.S. Lim, B.J. Park, I.H. Park,
Y.W. Kim and G.Y. Yeom
J. Phys. D: Appl. Phys. 42 (2009) February
055202 (5pp) PDF
file
4. Etch Characteristics
of TiO2 Etched by
Using an Atomic Layer Etching technique
with BCl3 Gas and
an Ar Neutral Beam
J.B. Park, W.S. Lim, S.D. Park, B.J. Park
and G.Y. Yeom
Journal of the Korean Physical Society,
54 3(2009) March 976-980 PDF
file
5. Characteristics
of SiOx Thin Films Deposited by Using Direct-Type
Pin-to-Plate Dielectric Barrier Discharge
with PDMS/He/O2 Gases
at Low Temperature
J.H. Lee, Y.S. Kim, S.J. Kyung, J.T. Lim
and G.Y. Yeom
Journal of the Korean Physical Society,
54 3(2009) March 981-985 PDF
file
6. Electronic
structures of Ba-on-Alq3 interfaces and
device characteristics of organic light-emitting
diodes based on these interfaces
J.T Lim, G..Y. Yeom, K.W. Lhmand T.H. Kang
JOURNAL OF APPLIED PHYSICS 105, (2009) April
083705 PDF
file
7. Atmospheric
pressure PECVD of SiO2 thin film at a low
temperature using HMDS/O2/He/Ar
Y.S. Kim, J.H. Lee, J.T. Lim J.B. Park and
G.Y. Yeom
Thin Solid Films 517 (2009) May 4065-4069 PDF
file
8. Residual
stress on nanocrystalline silicon thin films
deposited under energetic ion bombardment
by using internal ICP-CVD
H.C. Lee, S.P. Hong, S.K. Kang and G.Y.
Yeom
Thin Solid Films 517 (2009) May 4100-4103 PDF
file
9.
Characteristics of SiOx Thin Film Deposited
by Atmospheric Pressure Plasma-Enhanced
Chemical Vapor Deposition Using PDMS/O2/He
J.H. Lee, Y.S. Kim, J.S. Oh, S.J. Kyung,
J.T. Lim, and G.Y. Yeom
Journal of The Electrochemical Society,
156 7 (2009) May D248-D252 PDF
file
10. High-energy
negative ion beam obtained from pulsed inductively
coupled plasma for charge-free etching process
O. V. Vozniy and G. Y. Yeom
APPLIED PHYSICS LETTERS, 94 (2009) June
231502 PDF
file
11. Improvement
of surface roughness in silicon-on-insulator
wafer fabrication using a neutral beam etching
T.H. Min, B.J. Park, S.K. Kang, G.H. Gweon,
Y.Y. Kim and G.Y. Yeom
J. Phys. D: Appl. Phys. 42 (2009) July 155204
(6pp) PDF
file
12. Bulk and Interface effects on voltage
linearity of ZrO2.SiO2 multilayered metal-insulator-metal
capacitors for analog mixed-signal applications
S.D. Park,C. Park, D.C. Gilmer, H.K. Park,
C.Y. Kang, K.Y. Lim, C.Burham, J. Barnett,
P.D. Kirsch, H.H. Tseng,
R. Jammy and G.Y. Yeom
APPLIED PHYSICS LETTERS 95 (2009) July 022905
PDF
file
13. Study of Internal
Linear Inductively Coupled Plasma Source
for Ultra Large-Scale Flat Panel Display
Processing
J.H. Lim, K.N. Kim, G.H. Gweon, J.B. Park
and G.Y. Yeom
Plsma Chemistry and Plasma Processing, 29
4 (2009) July 251-259 PDF
file
14. Effect of
Antenna Diameter on the Characteristics
of Internal-Type Linear Inductively Coupled
Plasma
J.H. Lim, K.N. Kim, G.H. Gweon, S.P. Hong
and G.Y. Yeom
Japanese Journal of Applied Physics 48 (2009)
September 096002 PDF
file
15. Plasma texturing
of multicrystalline silicon for solar cell
using remote-type pin-to-plate dielectric
barrier discharge
J.B. Park, J.S. Oh, E.l. Gil, S.J. Kyoung
,J.S. Kim and G.Y. Yeom
J. Phys. D: Appl. Phys. 42 (2009) September
215201 (6pp) PDF
file
16. Effect of
Multi-Polar Magnetic Field on the Properties
of Nanocrystalline Silicon Thin Film Deposited
by Internal-Type Inductively Coupled Plasma
H.B. Kim, H.C. Lee, K.N. Kim, S.K. Kang
and G.Y. Yeom
Journal of Nanoscience and Nanotechnology
9 (2009) October 7440-7445 PDF
file
17. Low Damage
Atomic Layer Etching of ZrO2 by Using BCl3
Gas and Ar Neutral Beam
W.S. Lim, J.B. Park, J.Y. Park, B.J. Park,
and G.Y. Yeom
Journal of Nanoscience and Nanotechnology
9 (2009) October 7379-7382 PDF
file
18. Device Characteristics
of Organic Light-Emitting Diodes Based on
Electronic Structure of the Ba-Doped Alq3
Layer
J.T. Lim, K.N. Kim and G.Y. Yeom
Journal of Nanoscience and Nanotechnology
9 (2009) October7485-7490 PDF
file
19. Plasma
Characteristics of Large Area Inductively
Coupled Plasma System Using Ferrite-Module-Enhanced
U-Type Antenna
K.N. Kim, J.H. Lim and G.Y. Yeom
Japanese Journal of Applied Physics 48 (2009)
November 116006 PDF
file
20. Light-Emitting
Characteristics of Organic Light-Emitting
Diodes with Ba/Al Cathode and Effect of
Ba Thickness by Measuring their Built-in
Potential
J.T. Lim and G.Y. Yeom
Japanese Journal of Applied Physics 48 (2009)
December 122102 PDF
file
International Publications 2008
1.
Low angle forward reflected neutral
beam source and its applications B.J. Park, S.W. Kim, S.K.
Kang, K.S. Min, S.D. Park, S.J. Kyung,
H.C. Lee, J.W. Bae, J.T. Lim, D.H.
Lee, and G.Y Yeom
J. Phys. D: Appl. Phys, 41 (2008)
024005(13pp) PDF
file
2.
Light-Emitting Characteristics of
Top-Emitting Organic Light-Emitting
Diodes Based on the Interfacial Electronic
Feature of Cs-on-Alq3 J.T. Lim, J.H. Lee, Y.S.
Kim, and G.Y. Yeom
Journal of the Korean Physical Society,
52 2 (2008) 476-480 PDF
file
3. Characteristics
of a Ferromagnetic-Enhanced Inductively-Coupled
Plasma by an Internal Linear Antenna J.H. Lim, K.N. Kim, J.K.
Park, and G.Y. Yeom
Journal of the Korean Physical Society,
52 2 (2008) 313-317 PDF
file
4.Comparison of the Electrical
Characteristics of Serpentine-Type
and Double-Comb-Type Antennas for
Large-Area Plasma Generation J.K. Park, K.N. Kim, J.
H. Lim, and G.Y. Yeom
Journal of the Korean Physical Society,
52 2 (2008) 308-312 PDF
file
5. Plasma Characteristics and
Antenna Electrical Characteristics
of an Internal Linear Inductively
Coupled Plasma Source with a Multi-Polar
Magnetic Field K.N. Kim, J.H. Lim, J.K.
Park, G.Y. Yeom, S.H. Lee, and J.K.
Lee
Plasma Chem Plasma Process, 28 (2008)
147-158 PDF
file
6. White
top-emitting organic light-emitting
diodes using one-emissive layer of
the DCJTB doped DPVBi layer M.S. Kim, C.H. Jeong, J.T.
Lim, and G.Y. Yeom
Thin Solid Films 516 (2008) 3590-3594 PDF
file
7. Uniformity
of internal linear-type inductively
coupled plasma source for flat panel
display processing J.H. Lim, K. N. Kim, J.
K. Park, J. T. Lim, and G. Y. Yeom
Applied Physics Letters 92, (2008)
051504 PDF
file
8. Effect of N2O
plasma treatment on the performance
of ZnO TFTs
K. Remashan, D.K. Hwang, S.D. Park,
J.W. Bae, G.Y. Yeom, S.J. Park, and
J.H. Jang
Electrochemical and Solid-State Letters,
11 (3) (2008) H55-H59 PDF
file
9. Characteristics
of SiO2-like
thin film deposited by atmospheric-pressure
PECVD using HMDS/O2/Ar
J.H. Lee, Thuy. T.T. Pham, Y.S. Kim,
J.T. Lim, S.J. Kyung, and G.Y. Yeom
Journal of The Electrochemical Society,
155 (3) (2008) D163-D166 PDF
file
10. Precise
depth control and low-damage atomic-layer
etching of HfO2
using BCl3
and Ar neutral beam S.D. Park, W.S. Lim, B.J. Park,
H.C. Lee, J.W. Bae, and G.Y. Yeom
Electrochemical and Solid-State Letters,
11 (4) (2008) H71-H73 PDF
file
11. Neutralized fluorine radical
detection using single-walled carbon
nanotube network S.H. Jung, S.H.
Hong, B.J. Park, J.B Choi, Y.J. Kim,
G.Y. Yeom, and S.H. Baik
Carbon 46 (2008) 24-29 PDF
file
12.
Effect of capacitive to inductive
coupling transition in multiple linear
U-type antenna on silicon thin film
deposition from pure SiH4 discharges H.B. Kim, H.C.Lee,
K.N. Kim and G.Y. Yeom
J. Vac. Sci. Technol, A26 4 (2008)
842-846 PDF
file
13.
Top-emitting organic light-emitting
diodes with Ba/Ag/indium tin oxide
cathode and built-in potential analyses
in these devices J.T. Lim, J.H.
Lee, G.Y. Yeom, E.H. Lee and T.W.
Kim
J. Vac. Sci. Technol, A26 (2008) 961-965
PDF
file
14.
Improvement
of electron field emission from carbon
nanotubes by Ar neutral beam treatment
S.J. Kyung, J.B. Park., B.J. Park,
J.H. Lee and G.Y. Yeom
Carbon, 46 (2008) 1316-1321 PDF
file
15.
Plasma-Enhanced
Chemical Vapor Deposition of SiO2
Thin Films at Atmospheric Pressure
by Using HMDS/Ar/O2
Y.S. Kim, J H. Lee, Thuy.T.T. Pham,
J.T. Lim and G.Y. Yeom
Journal of the Korean Physical Society,
53 2 (2008) 892-896 PDF
file
16. Laser Annealing on Ti Electrode:
Impact on TiOHfO2OSiO2 n-Type MOSFET
S.H. Heo, R. Dong, Musarrat Hasan,
H.S. Hwang, S.D. Park and G. Y. Yeom
Electrochemical and Solid-State Letters,
11 10 (2008) 276-279 PDF
file
17. Effect of the surface texturing
shapes fabricated using dry etching
on the extraction efficiency of vertical
light-emitting diodes
H.C. Lee, J.B. Park, J.W. Bae, Pham
Thi Thu Thuy, M.C. Yoo and G.Y. Yeom
Solid-State Electronics, 52 (2008)
1193-1196 PDF
file
18. A Two-Step-Recess Process
Based on Atomic-Layer Etching for
High-Performance 0.52Al0.48As/In0.53Ga0.47As
p-HEMTs
T.W. Kim, Associate Member, IEEE,
D.H. Kim, S.D. Park, S.H.Shin, S.J.
Jo, H.J. Song, Associate Member, IEEE,
Y.M. Park, J.O. Bae, Y.W. Kim, G.Y.
Yeom, J.H. Jang J.I. Song, senior
Member, IEEE
IEEE TRANSACTIONS ON ELECTRON DEVICES,
55 7 (2008) 1577-1584 PDF
file
19.
X-ray photoelectron spectroscopic
study of Ge2Sb2Te5 etched by fluorocarbon
inductively coupled plasmas
S.K. Kang, J.S. Oh, B.J. Park, S.W.
Kim, J.T. Lim, G.Y. Yeom, C.J. Kang
and G. J. Min
APPLIED PHYSICS LETTERS, 93 (2008)
043126 PDF
file
20.
Scalable
internal linear double comb-type inductively
coupled plasma source for large area
flat panel display processing
K.N. Kim, J.H. Lim, J.K. Park and
G.Y. Yeom
Surface & Coatings Technology
202 (2008) 5242-5245 PDF
file
21.
Properties
of SixNy thin film deposited by plasma
enhanced chemical vapor deposition
at low temperature using SiH4/NH3/Ar
as diffusion barrier film
Thuy T.T. Pham, J.H. Lee, Y.S. Kim
and G.Y. Yeom
Surface & Coatings Technology,
202 (2008) 5617-5620 PDF
file
22.
Atomic layer etching of (100)/(111)
GaAs with chlorine and low angle forward
reflected Ne neutral beam
W.S. Lim, S.D. Park, B.J. Park and
G.Y. Yeom
Surface & Coatings Technology,
202 (2008) 5701-5704 PDF
file
23.
Top-emitting organic light-emitting
diodes based on semitransparent conducting
cathode of Ba/Al/ITO
J.T. Lim, J.H. Lee, J.K. Park, B.J.
Park and G.Y. Yeom
Surface & Coatings Technology
202 (2008) 5646-5649 PDF
file
24.
Characteristics of Plasma Using a Ferromagnetic
Enhanced Inductively Coupled Plasma
Source
K.N. Kim, J.H. Lim, J.K. Park, J.T.
Lim, and G.Y. Yeom
Japanese Journal of Applied Physics,
47 9 (2008) 7339-7342 PDF
file
25.
Effect of antenna capacitance on the
plasma characteristics of an internal
linear inductively coupled plasma
system
J.H. Lim, K.N. Kim, J.K. Park, and
G.Y. Yeom
PHYSICS OF PLASMAS, 15 (2008) 083501
PDF
file
26. Effect
of initial crystallized silicon layer
on the properties of microcrystalline
silicon grown by internal nductively
coupled plasma-type plasma enhanced
chemical vapor deposition
H.C. Lee, H.B. Kim, G.Y. Yeom, I.H.
Park and Y.W. Kim
Surface & Coatings Technology,
203 (2008) 799-803 PDF
file
27. Selective
Etching of HfO2 by Using Inductively-Coupled
Ar/C4F8 Plasmas and the Removal of
Etch Residue on Si by Using an O2
Plasma Treatment
K.S. Min, B.J. Park, S.W. Kim, S.K.
Kang, G.Y. Yeom, S.H. Heo, H.S. Hwang
and C.Y. Kang
Journal of the Korean Physical Society,
53 3 September (2008) 1675-1679 PDF
file
28. Plasma
etching of SiO2 using remote-type
pin-to-plate dielectric barrier discharge
J.B. Park, S.J. Kyung, and G.Y.Yeom
JOURNAL OF APPLIED PHYSICS, 104 (2008)
083302 PDF
file
29. Characteristics
of Al2O3 gate dielectrics partially
fluorinated by a low energy fluorine
beam
S.W. Kim, B.J. Park, S.K. Kang, B.H.
Kong, H.K. Cho, G,Y, Yeom, S.H Heo
and H.S Hwang
APPLIED PHYSICS LETTERS, 93 (2008)
191506 PDF
file
30. Device
Performance of the Top-Emitting Organic
Light-Emitting Diodes Using the Ba/Au/Indium
Tin Oxide Cathode System with Long
Skin Depth
J.T. Lim, C.H. Jeong and G.Y. Yeom
Japanese Journal of Applied Physics,
47 10 (2008) 8039-8042 PDF
file
International Publications
2007
1. Doped-Fluorine
on electrical and optical properties
of tin oxide films grown by ozone-assisted
thermal CVD
J.W. Bae, S.W. Lee, and G.Y. Yeom
Journal of The Electrochemical Society,
154(1) (2007) D34-D37 PDF
file
2. Surface
analysis of atomic-layer-etched silicon
by chlorine
C.K. Oh, S.D. Park, H.C. Lee, J.W.
Bae, and G.Y. Yeom
Electrochemical and Solid-State Letters,
10 (3) (2007) H94-H97 PDF
file
3. SiOxNy
thin film deposited by plasma enhanced
chemical vapor deposition at low temperature
using HMDS-O2-NH3-Ar
gas mixtures
J.H. Lee, C.H. Jeong, J.T. Lim, V.A.
Zavaleyev, S.J. Kyung, and G.Y. Yeom
Surface & CoatingsTechnology,
201 (2007) 4957-4960 PDF
file
4.
Top-emitting organic light-emitting
diode using transparent conducting
indium oxide layer fabricated by a
two-step ion beam-assisted deposition
J.T. Lim, C.H. Jeong, A. Vozny,
J.H. Lee, M.S. Kim, and G.Y. Yeom
Surface & CoatingsTechnology,
201 (2007) 5358-5362 PDF
file
5.
Effects of inductively coupled plasma
treatment using O2,
CF4, and CH4
on the characteristics of organic
light emitting diodes
C.H. Jeong, J.H. Lee, J.T.
Lim, M.S. Kim, and G.Y. Yeom
Surface & CoatingsTechnology,
201 (2007) 5012-5016 PDF
file
6.
The effect of atmospheric pressure
plasma treatment on the field emission
characteristics of screen printed
carbon nanotubes
S.J. Kyung, J.B. Park, Maksym
Voronko, J.H. Lee and G.Y. Yeom
Carbon, 45 (2007) 649-654 PDF
file
7.
Growth of carbon nanotubes by atmospheric
pressure plasma enhanced chemical
vapor deposition using NiCr catalyst S.J. Kyung, Voronko
M., Y.H. Lee, C.W. Kim, J.H. Lee,
and G.Y. Yeom
Surface and Coatings Technology, 201
(2007) 5378-5382 PDF
file
8.
Anisotropic etching of InP and InGaAs
by using an inductively coupled plasma
in Cl2/N2
and Cl2/Ar mixtures at low bias power
J.W. Bae, C.H. Jeong, J.T.
Lim, H.C. Lee, G.Y. Yeom, and I. Adesida
Journal of the Korean Physical Society,
50(4) (2007) 1130-1135 PDF
file
9.
Effect of neutral beam etching of
p-GaN on the GaN device characteristics
B.J. Park, K.S. Min, H.C. Lee,
J.W. Bae, D.W. Kim, and G.Y. Yeom
Journal of Vacuum Science and Technology
B: Microelectronics and Nanometer
Structures, 25(2) (2007) 295-298 PDF
file
10.
Effect of fluorine ion/neutral-beam
irradiation on ohmic contact formation
to n-type GaN
H.C. Lee, J.W. Bae, B.J. Park,
J.H. Jang, and G.Y. Yeom
Electrochemical and Solid-State Letters,
10(6) (2007) 161-164 PDF
file
11.
Plasma and antenna characteristics
of a linearly extended inductively
coupled plasma system using multi-polar
magnetic field
K.N. Kim, J.H. Lim, and G.Y.
Yeom
Thin Solid Films, 515(12) (2007) 5193-5196 PDF
file
12.
Effect of additive gases on the selective
etching of ZrOx film using inductively
coupled BCl3-based plasmas
S.D. Park, J.H. Lim, and G.Y.
Yeom
Thin Solid Films, 515(12) (2007) 5045-5048 PDF
file
13.
Energy shift during ion extraction
from an ICP source
O.V. Vozniy , B.J. Park, K.S.
Min, and G.Y. Yeom
Journal of the Korean Physical Society,
50(5) (2007) 1271-1275 PDF
file
14.
The effect of Ar neutral beam treatment
of screen-printed carbon nanotubes
for enhanced field emission
S.J. Kyung, J.B. Park, B.J.
Park, K.S. Min, J.H. Lee, G.Y. Yeom,
Y.S. Shin, and C.Y. Park
Journal of Applied Physics, 101(8)
(2007) 83305 PDF
file
15. Two-dimensional fluid simulation
of large-area plasma source with parallel
resonance antenna
S.M. Choi, S.H. Lee, J.G. Lee,
K.N. Kim, and G.Y. Yeom
Computer Physics Communicationsm 177
(1-2) (2007) 126 PDF
file
16. Synthesis,structural characterization
and photoluminescence properties of
SiOx nanowires prepared using a palladium
catalyst
H.W. Kim, S.H. Shim, J.W. Lee,
C.M. Lee, G.Y. Yeom, N.E. Lee, J.B.Yoo,
Y.C. Joo, H.J. Kim, and E.J. Yoon
Journal of the Korean Physical Society,
50 6 (2007) 1799-1802 PDF
file
17.
High efficiency white organic light-emitting
diodes from one emissive layer
C.H. Jeong, J .T Lim., M.S.
Kim, J.H. Lee, J.W. Bae, and G.Y.
Yeom
Japanese Journal of Applied Physics,
Part 1: Regular Papers and Short Notes
and Review Papers
, 46 2 (2007) 806-809 PDF
file
18.
Top-emitting organic light-emitting
diodes using Cs/Al/Ag cathodes
J.T Lim., C.H. Jeong, M.S.
Kim, J.H. Lee, J.W. Bae, and G.Y.
Yeom
Japanese Journal of Applied Physics,
Part 1: Regular Papers and Short Notes
and Review Papers
, 46 7A (2007) 4296-4299 PDF
file
19.
High-luminance top-emitting organic
light-emitting diodes using CsAlAu
as the semitransparent multimetal
cathode
J.T. Lim, C.H. Jeong, J.H.
Lee, G.Y. Yeom, E.C. Shin, E.H. Lee,
and T.W Kim.
Journal of the Electrochemical Society,
154 10 (2007) 302-305 PDF
file
20.
Transparent top-emitting organic light-emitting
diodes using a Cs/AI/Ag/ITO semi-transparent
cathode
J.T. Lim, C.H. Jeong, M.S.
Kim, J.H. Lee, J.W. Bae, and G.Y.
Yeom
Journal of the Korean Physical Society,
51 3 (2007) 1147-1151 PDF
file
21. Thermally stable Ti/Al/W/Au
multilayer ohmic contacts on n-type
GaN
H.C. Lee, J.W. Bae, and G.Y.
Yeom
Journal of the Korean Physical Society,
51 3 (2007) 1046-1049 PDF
file
22.
Study on the low-angle surface scattering
of the low-energy ions
K.S. Min, B.J. Park, J.B.
Park, S.K. Kang, G.Y. Yeom, and D.H.
Lee
Journal of the Korean Physical Society,
51 3 (2007) 967-971 PDF
file
23.
Blue organic light-emitting diodes
fabricated by using an enhanced hole-blocking
property
J.T. Lim, C.H. Jeong, J.H.
Lee, M.S. ,Kim J.W. Bae, and G.Y.
Yeom
Journal of the Korean Physical Society,
51 3 (2007) 1019-1022 PDF
file
24.
Study of selective amorphous silicon
etching to silicon nitride using a
pin-to-plate dielectric barrier discharge
in atmospheric pressure
S.J. Kyung, J.B. Park, J.H.
Lee, J.T. Lim, and G.Y. Yeom
Applied Physics Letters, 91 9 (2007)
91504 PDF
file
25. Fabrication of InAs composite
channel high electron mobility transistors
by utilizing Ne-based atomic layer
etching
T.W. Kim, J.I. Song, J.H.
Jang, D.H. Kim, S.D. Park, J.W. Bae,
and G.Y. Yeom
Applied Physics Letters, 91 10 (2007)
102110 PDF
file
26.
Loss current minimization during ion
extraction from an inductively coupled
plasma
Oleksiy Vozniy, Kostyantyn
Polozhiy, and G.Y. Yeom
Journal of Applied Physics, 102 (2007)
083306 PDF
file
27.
Atmospheric pressure remote plasma
ashing of photoresist using pin-to-plate
dielectric barrier discharge
J.B. Park, S.J. Kyung, and
G.Y. Yeom
Japanese Journal of Applied Physics
46 38 (2007) L942-L944 PDF
file
28.
Highly selective and low damage atomic
layer etching of InP/InAlAs heterostructures
for high electron mobility transistor
fabrication
S.D. Park, C.K. Oh, W.S. Lim,
H.C. Lee, J.W. Bae, G.Y. Yeom, T.W.
Kim, J.I. Song, and J.H. Jang
Applied Physics Letters, 91 1 (2007)
13110 PDF
file
29.
Four-wavelength white organic light-emitting
diodes using 4,4'-bis-[carbazoyl-(9)]-stilbene
as a deep blue emissive layer
C.H. Jeong, J.T. Lim, M.S.
Kim, J.H. Lee, J.W. Bae, and G.Y.
Yeom
Organic Electronics: physics, materials,
applications, 8 6 (2007) 683-689 PDF
file
30.
Effect
of ion bombardment on the chemical
and the mechanical properties of Silicon-Nitride
thin films deposited by using PECVD
with SiH4/NH3/Ar gases at low temperature
Thuy T.T. Pham,
J.H. Lee, Y.S. Kim, and G.Y. Yeom
Journal of the Korean Physical Society,
51 6 (2007) 1934-1939 PDF
file
31.
High-speed etching of amorphous silicon
using pin-to-plate dielectric barrier
discharge S.J. Kyung, J.B.
Park, Y.H. Lee, J.H. Lee, and G.Y.
Yeom
Surface & Coatings Technology
202 (2007) 1204-1207 PDF
file
32.
Characteritics of inductively coupled
plasma using internal double comb-type
antenna for flat panel display processing
J.H. Lim, K.N.
Kim, J.K. Park, J.H. Park, and G.Y.
Yeom
Japanese Journal of Applied Physics,
46 48 (2007), L1216-L1218 PDF
file
33. Effect of a two-step recess
process using atomic layer etching
on the performance of In0.52Al0.48As/In0.53Ga0.47As
p-HEMTs T.W. Kim, D.H.
Kim, S.D. Park, G.Y. Yeom, B.O. Lim,
J.K. Rhee, J.H. Jang, and J.I. Song
IEEE ELECTRON DEVICE LETTERS, 28 12
(2007) 1086-1088 PDF
file
34.
Characteristics
of inductively coupled plasma with
internal linear antenna using multi-polar
magnetic field for FPD processing J.H. Lim, K.N.
Kim, and G.Y. Yeom
Solid State Phenomena, 124-126 (2007)
271-274 PDF
file
35.
Formation
of high flux parallel neutral beam
using a three grid system of ion beam
during low angle forward reflection
of ions B.J. Park, K.S.
Min, S.D. Park, J.W. Bae, Oleksiy
Vozniy and G.Y. Yeom
Solid State Phenomena, 124-126 (2007)
275-278
International Publications
2006
1.
Characteristics of a large area plasma
source using internal multiple U-type
antenna
K.N. Kim, and G.Y. Yeom
Journal of the Korean Physical Society,
48 2 (2006) 256 - 259 PDF
file
2. Characteristics
of SiOxNy films deposited by PECVD
at low-temperature using BTBAS-NH3-O2
J.H. Lee, C.H. Jeong, J.T. Lim, V.A.
Zavalyev, K.S. Min, S.J. Kyong, and
G.Y. Yeom
Journal of the Korean Physical Society,
48 1 (2006) 89 - 92 PDF
file
3. White
Organic light-emitting diodes using
bis aluminum(III) as a new hole-blocking
layer
J.T. Lim, C.H. Jeong, J.H. Lee, J.H.
Lim, and G.Y. Yeom
Japanese Journal of Applied Physics,
45 3A (2006) 1826-1828 PDF
file
4.
Selective plasma etching of ZrOx to
Si using inductively coupled BCl3/C4F8
plasmas
S.D. Park, J.H. Lim, C.K. Oh,
H.C. Lee, and G.Y. Yeom
Applied Physics Letters, 88 (2006)
094107-1 ~ 094107-3 PDF
file
5.
Plasma and electrical characteristics
of a novel internal linear inductively
coupled plasmasource for flat panel
display applications
K.N. Kim, and G.Y. Yeom
Journal of the Korean Physical Society,
48 3 (2006) 422 - 426 PDF
file
6.
Effective plasma confinement by applying
multipolar magnetic fields in an internal
linear inductively coupled plasma
system
K.N. Kim, M.S. Kim, and G.Y.
Yeom
Applied Physics Letters, 88 (2006)
161503-1 ~161503-3
PDF
file
7.
Study on the O2 plasma treatment of
indium tin oxide for organic lightemitting
diodes using inductively coupled plasma
C.H. Jeong, J.H. Lee, J.H.
Lim, J.T. Lim, and G.Y. Yeom
Japanese Journal of Applied Physics,
45 4A (2006) 2788-2791 PDF
file
8. Field
emission properties of carbon nanotubes
synthesized by capillary type atmospheric
pressure plasma enhanced chemical
vapor depositionat
low temperature
S.J. Kyung, Y.H. Lee, C.W. Kim, J.H.
Lee, and G.Y. Yeom
Carbon, 44 (2006) 1530-1534 PDF
file
9. Characteristic
of carbon nanotubes synthesized by
pin-to-plate type atmospheric pressure
plasma enhanced chemical vapor deposition
at low temperature
Y.H. Lee, S.J. Kyung, C.W. Kim, and
G.Y. Yeom
Carbon, 44 (2006) 799-823 PDF
file
10. Deposition
of carbon nanotubes by capillary-type
atmospheric pressure PECVD
S.J. Kyung, Y.H. Lee, C.W. Kim, J.H.
Lee, and G.Y. Yeom
Thin Solid Films(APCPST), 506-507
(2006) 268-273 PDF
file
11. Low
Impedance Antenna arrangement of Internal
Linear ICP Source for Large Area FPD
Processing
S.J. Jung, K.N. Kim, and G.Y. Yeom
Thin Solid Films(APCPST), 506-507
(2006) 460-463 PDF
file
12. Synthesis
and characteristics of bis(2,4-Dimethyl-8-Quinolinolato)(Triphenylsilanolato)
Aluminium(III), A Potential Hole-Blocking
material for Organic Light-Emitting
diodes
J.T. Lim, C.H. Jeong, J.H. Lee, H.K.
Jeong, S.Y. Chai, I.M. Lee, and G.Y.
Yeom
Journal of the Organometallic Chemistry,
691 (2006) 2701-2707 PDF
file
13. Atomic
layer etching of InP using a low angle
forward reflected Ne neutral beam
S.D. Park, C.K. Oh, J.W. Bae, and
G.Y. Yeom
T. W. Kim, J. I. Song and J. H. Jang
Applied Physics Letters, 89 (2006)
043109 PDF
file
14. Photoresist ashing technology
using N2/O2 ferrite-core ICP in the
dual damascene process
H.W. Kim, J.H. Myung, J.W. Lee, H.S.
Kim, K.H. Kim, J.Y. Jang, T.H. Yoon,
S.K. Kim, D.K. Choi, C.W. Chung, G.Y.
Yeom, J.M. Myoung, and H.J. Kim
Journal of Material Science,41 (2006)
5040-5042 PDF
file
15. Investigation
of the magnetic properties of an RF-Driven
inductively coupled argon plasma
O. Vozniy, M. Voronko, B.J. Park,
and G.Y. Yeom
Journal of the Korea Physical Society,
49 4 (2006) 1460~1464 PDF
file
16. Characteristics
of SiOxNy films deposited by inductively
coupled plasma enhanced chemical vapor
deposition using HMDS/NH3/O2/Ar for
water vapor diffusion barrier
J.H. Lee, C.H. Jeong, H.B. Kim, J.T.
Lim, S.J. Kyung, and G. Y. Yeom
Thin Solid Films, 515 (2006) 917-921 PDF
file
17. Effect
of Indium-Oxide deposited using an
oxygen ion-beam-assisted-deposition
to top-emitting organic light-emitting
diodes
C.H. Jeong, J.T. Lim, J.H. Lee, M.S.
Kim, J.W. Bae, and G.Y. Yeom.
Japanese Journal of Applied Physics,
45 10B (2006) 8457-8461 PDF
file
18.
Characteritics of a multilayer SiOx(CH)yNz
film deposited by low temperature
plasma enhanced Chemical vapor deposition
using Hexamethyldisilazane/Ar/N2O
J.H. Lee, C.H. Jeong, J.T. Lim, Viktor
A. Zavaleyev, S.J. Kyung, and G.Y.
Yeom
Japanese Journal of Applied Physics,
45 10B (2006) 8430-8434 PDF
file
19. White
organic light-emitting diodes from
three emitter layers
M.S. Kim, J.T. Lim, C.H. Jeong, J.H.
Lee, and G.Y. Yeom
Thin Solid Films, 515 (2006) 891-895 PDF
file
20. CF4-based
neutral-beam Etch Characteristic of
Si and SiO2 using a low-angle forward-reflected
neutral-beam etching system
D.H. Lee, B.J. Park, K.S. Min, and
G.Y. Yeom
Journal of the Korean Physical Society,
49 6 (2006) 2307~2310 PDF
file
21. Characteristics
of large area inductively coupled
plasma using a multiple linear Antennas
with u-type parallel connection for
flat panel display processing
K.N. Kim, K.S. Min, and G.Y. Yeom
Japanese Journal of Applied Physics,
45 1 (2006) 1 8869-8872 PDF
file
22. Effect
of dual frequency on the plasma characteristics
in an internal linear inductively
coupled plasma source
K.N. Kim, J.H. Lim, and G.Y. Yeom
Applied Physics Letters, 89 (2006)
251501 PDF
file
23. Improvement
of field emission from screen-printed
carbon nanotubes by He/(N2, Ar) atmospheric
pressure plasma treatment
S.J. Kyung, J.B. Park, J.H. Lee, and
G.Y. Yeom
Journal of Applied Physics, 100 (2006)
124303 PDF
file
24. Nanostructures fabrication
on Ta thin film using atomic force
microscope lithography
S.Lee, H.Lee, D.H. Lee, B.J. Park,
and G.Y. Yeom
Molecular Crystals and Liquid Crystals,
445 (2006) 15[405]-118[408] PDF
file
25. OLED
deposition characteristics for 4th
generation mass-production
C.W. Kim, H.G. Kwo., J.S. Rho, J.S.
Yoon, K.B. Bae, C.H. Jeong, and G.Y.
Yeom
Digest of Technical Papers - SID International
Symposium, 37 (2006) 432-435
26. Large
area plasma characteristics using
internal linear ICP (Inductively Coupled
Plasma) source for the FPD processing
K.N. Kim, J.H. Lim, and G.Y. Yeom
Proceedings of International Meeting
on Information Display, 2006 544-547c
International Publications
2005
1.
Fabrication of Si nano-pillar array
through Ni nano-dot mask using inductively
coupled plasma
M.J. Kim, J.S. Lee, S.K. Kim, G.Y. Yeom,
J.B. Yoo, and C.Y. Park
Thin Solid Films, 475 (2005) 41-44 PDF
file
2. Simulation of ion beam transport
in an ion gun for materials processing
S.J. Kim, S.J. Wang, J.K. Lee,
Senior Member. IEEE, and G.Y. Yeom
IEEE Transactions on Plasma Science,
33 2 (2005) 538-543 PDF
file
3.
Low-impedance internal linear inductive
antenna for large-area flat panel
display plasma processing
K.N. Kim, S.J. Jung, Y.J. Lee,
G.Y. Yeom, S.H. Lee, and J.K. Lee
Journal Of Applied Physics, 97 (2005)
063302 PDF
file
4.
Characteristics of inductively coupled
plasma with multiple u-type internal
antenna for flat panel display applications
K.N. Kim, S.J. Jung and G.Y.
Yeom
Surface and Coatings Technololgy,
200 (2005) e 784-787 PDF
file
5.
Plasma and impedance characteristics
of internal linear antennas for flat
panel display applications
K.N. Kim, S.J. Jung and G.Y.
Yeom
Thin Solid Films, 491 (2005) 82-85 PDF
file
6.
Novel internal linear inductively
coupled plasma source for flat panel
display Applications
K.N. Kim, S.J. Jung and G.Y.
Yeom
Japanese Journal of Applied physsics,
44 11 (2005) 8133-8137 PDF
file
7.
Etching characteristics of multiple
U -type internal linear inductively
coupled plasma for flat panel display
S.J. Jung, K.N. Kim and G.Y.
Yeom
Surface and Coatings Technology, 200
(2005) 780-783 PDF
file
8. The effect
of N2 flow
rate in He/O2/N2
on the chatacteristics of large area
pin-to-plate dielectric barrier discharge
Y.H. Lee, S.J. Kyung, C.H.
Jeong and G.Y. Yeom
Japanese Journal of Applied physics,
44 2 (2005) 78-81 PDF
file
9. Properties
and applications of a modified dielectric
barrier discharge generated at atmospheric
pressure
Y.H. Lee and G.Y. Yeom
Japanese Journal of Applied physics,
44 2 (2005) 1076-1080 PDF
file
10.
Characteristics of a pin-to plate
dielectric barrier discharge in helium
Y.H. Lee and G.Y. Yeom
Journal of the Korean Physical Society,
47 1 (2005) 74-78 PDF
file
11.
A study of electrical damage to a-Si:H
thin film transistor during plasma
ashing by a pin-to-plate type atmospheric
pressure plasma
Y.H. Lee, S.J. Kyung, J.H.
Lim and G.Y. Yeom
Japanese Journal of Applied Physics,
44 48 (2005) 1456-1459 PDF
file
12. Characteristics
of carbon nanotubes deposited by using
low-temperature atmospheric-pressure
plasma-enhanced chemical vapor deposition
C.W. Kim, Y.H. Lee, S.J. Kyung
and G.Y. Yeom
Journal of the Korea Physical Society,
46 4 (2005) 918~921 PDF
file
13. Effect
of pretreatment on the deposition
of carbon nanotubes by using atmospheric-pressure
plasma enhanced chemical vapor deposition
S.J. Kyung, Y.H. Lee, C.W.
Kim, J.H. Lee and G.Y. Yeom
Journal of Korean Physical Society,
47 3 (2005) 463~468 PDF
file
14. Growth
and field emission properties of multiwalled
carbon nanotubes synthesized by pin-to-plate
type atmospheric pressure plasma enhanced
chemical vapor deposition
S.J. Kyung, Maksym Voronko,
J.H. Lee and G.Y. Yeom
Journal of the Korean Physical Society,
47 5 (2005) 818~827 PDF
file
15.
Highly efficient vertical laser-liftoff
GaN-based light-emitting diodes formed
by optimization of the cathode structure
D.W. Kim, H.Y. Lee, M.C. Yoo
and G.Y. Yeom
Applied Physics Letters, 86 (2005)
052108 PDF
file
16.
A study of transparent contact to
vertical GaN based lighy-emitting
diodes
D.W. Kim, H.Y. Lee, Y.J. Sung
and G.Y. Yeom
Journal Of Applied Physics, 98 (2005)
053102 PDF
file
17.
Effect of GaN microlens array on efficiency
of GaN-based blue-light-emitting diodes
D.W. Kim, H.Y. Lee, N.G. Cho,
Y.J. Sung and G.Y. Yeom
Japanese Journal of Applied Physics,
44 1 (2005) 18-20 PDF
file
18.
Characteristics of silicon carbide
etching using magnetized inductively
coupled plasma
H.Y. Lee, D.W. Kim, Y.J. Sung
and G.Y. Yeom
Japanese Journal of Applied Physics,
44 2 (2005) 1445-1449 PDF
file
19.
Fabrication of SiC micro-lens by plasma
etching
H.Y. Lee, D.W. Kim, Y.J. Sung
and G.Y. Yeom
Thin Solid Films, 475 (2005) 318-322
PDF
file
20.
Effects of axial magnetic field on
neutral beam etching by low-angle
forward-reflected neutral beam method
D.H. Lee, B.J. Park and G.Y.
Yeom
Japanese Journal of Applied Physics,
44 2 (2005) 63-66 PDF
file
21.
Removal of aspect ratio dependent
etching by low-angle forward reflected
neutral beam etching
D.H Lee, B.J. Park, S.J. Kim,
J.K. Lee, K.H. Baek, C.J. Kang and
G.Y. Yeom
Journal of Korean Physical Society,
46 4 (2005) 867-871 PDF
file
22. Precise
depth control of silicon etching using
chlorine atomic layer etching
S.D. Park, K.S. Min, B.Y. Yoon,
D.H. Lee and G.Y. Yeom
Japanese Journal of Applied Physics,
44 1A (2005) 389-393 PDF
file
23.
Atomic layer etching of Si(100) and
Si(111) using Cl2 and Ar neutral beam
S.D. Park, D.H. Lee and G.Y.
Yeom
Electrochemical and Solid-State Letters,8
(2005) 106-109 PDF
file
24. Surface
roughness variation during Si atomic
layer etching by chlorine adsorption
followed by an Ar neutral beam irradiation
S.D. Park, C.G. Oh, D.H. Lee
and G.Y. Yeom
Electrochemical and Solid-State Letters,
8 11 (2005) 177-179 PDF
file
25. Atomic
Layer Etching of Cl-adsorbed Silicon
by using a Low- Angle Forward Reflected
Ar Neutral Beam
S.D. Park, D.H. Lee and G.Y.
Yeom
Journal of the Korean Physical Society,
47 3 (2005) 469~473 PDF
file
26.
Indium-Oxide thin films deposited
by using an oxygen-ion-beam-assisted-deposition
technique for top-emitting organic
light-emitting diodes
J.T. Lim, N.G. Cho, C.H. Jeong,
J.H. Lee, J.H. Lim and G.Y. Yeom
Journal of Korean Physical Society,
47 1 (2005) 142-147 PDF
file
27. Characteristics
of organic light-emitting devices
by the surface treatment of indium
tin oxide surfaces using atmospheric
pressure plasmas
C.H. Jeong, J.H. Lee, Y.H.
Lee, N.G. Cho, J.T. Lim, C.H. Moon
and G.Y. Yeom
Japanese Journal of Applied physics,
44 1 (2005) 41-44 PDF
file
28. Deposition
of SiO2 by plasma enhanced chemical
vapor deposition as the diffusion
barrier to polymer substrates
C.H. Jeong, J.H. Lee, J.T. Lim, N.G.
Cho, C.H. Moon and G.Y. Yeom
Japanese Journal of Applied physics,
44 2 (2005) 1022-1026 PDF
file
29. Properties
of SiOxNy thin film deposited by low
temperature plasma enhanced chemical
vapor deposition using TEOS-NH3-O2-N2
gas mixtures
J.H. Lee, C.H. Jeong. J.T.
Lim, N.G. Cho, S.J. Kyung and G.Y.
Yeom
Surface and Coating Technology 200
(2005) 680-685 PDF
file
30. Characteristic
of SiO2 films deposited by low temperature
PECVD with TEOS/N2/O2
J.H. Lee, C.H. Jeong. J.T.
Lim and G.Y. Yeom
Journal of Korean Physical Society,
46 4 (2005) 890-894 PDF
file
31.
Effects of tin concentration and post-annealing
on the electrical and the optical
properties of In2-xSnxO3 (x=0~0.25)
deposited at room temperature
J.W. Bae, H.C. Lee and G.Y.
Yeom
Journal of Korean Physical Society,
47 5 (2005) 889-894 PDF
file
32.
Structural and electrical analysis
of silicon thin films deposited by
transformer-coupled-plasma enhanced
chemical-vapor-deposition
H.C. Lee, Y.J. Lee, J.K. Shin,
S.I. Baik, Y.W. Kim and G.Y. Yeom
Journal of Korean Physical Society,
47 2 (2005) 277-282 PDF
file
33. Selective growth of nanometre
scale structures with high resolution
using thermal energy in AFM lithography
S.W. Lee, H.W. Lee, B.J. Park
and G.Y. Yeom
Nanotechnology, 16 (2005) 3137-3141 PDF
file
International Publications
2004
1.
High rate etching of 6H_SiC in SF6-based
magnetically-enhanced inductively
coupled plasmas
D.W. Kim , H.Y. Lee , B.J.
Park , H.S. Kim , Y.J. Sung , S.H.
Chae , Y.W. Ko and G.Y. Yeom
Thin Solid Films, 447-448 (2004) 100-104
PDF
file
2. Characteristics of neutral beam
generated by reflection on a planar-type
reflector and its etching properties
D.H. Lee, S.J. Jung, S.D. Park
and G.Y. Yeom
Surface and Coatings Technology, 177-178
(2004) 420-425 PDF
file
3. Effect
of additive gases on the selective
etching of tungsten films using inductively
coupled halogen-based plasmas
S.D. Park , Y.J. Lee , N.G.
Cho , S.G. Kim , H.H. Choe , M.P.
Hong and G.Y. Yeom
Thin Solid Films, 447-448 (2004) 586-591 PDF
file
4. Effect of plasma cleanings on the
characteristics of MgO layer for plasma
display panel
H.K. Hwang, C.H. Jeong, Y.J.
Lee, Y.W. Ko and G.Y. Yeom
Surface and Coatings Technology, 177-178
(2004) 705-710 PDF
file
5. Oxide
surface cleaning by an atmospheric
pressure plasma
C.H. Yi, C.H. Jeong, Y.H. Lee,
Y.W. Ko and G.Y. Yeom
Surface and Coatings Technology, 177-178,
(2004) 711-715 PDF
file
6. Effects
of multipolar magnetic fields on the
characteristics of plasma and photoresist
etching in an internal linear inductively
coupled plasma system
K.N. Kim, Y.J. Lee, S.J. Kyong
and G.Y. Yeom
Surface and Coatings Technology, 177-178
(2004) 752-757 PDF
file
7. Reduction of the electrostatic
coupling in a large-area internal
inductively coupled plasma source
using a multicusp magnetic field
Y.J. Lee, K.N. Kim, and G.Y. Yeom,
M.A. Lieberman
Applied Physics Letters, 85 10 (2004)
1677-1679 PDF
file
8. Characteristics
of parallel internal-type inductively
coupled plasmas for large area flat
panel display processing
K.N. Kim, Y.J. Lee, S.J. Jung,
and G.Y. Yeom
Japanese journal of applied physics,
43 7A (2004), 4373-4375 PDF
file
9. Magnetically
enhanced inductively coupled plasma
etching of 6H-SiC
D.W. Kim, H.Y. Lee, S.J. Kyoung, H.S.
Kim, Y.J. Sung, S.H. Chae, and G.Y.
Yeom
IEEE Transactions on Plasma Science,
32(3) (2004) 1362~1366 PDF
file
10.
Etching of copper films for thin film
transistor liquid crystal display
using inductively coupled chlorine-based
plasmas
K.H. JANG, W.J. LEE, H.R. KIM and
G.Y. YEOM
Japanese Journal of Applied Physics,
43 12 (2004) 8300-8303 PDF
file
11. Requirements of neutral beam
source regarding gas pressure and
neutral angle for nanoscale etching
Sung Jin KIM, Hae June LEE1, Geun
Young YEOM2 and Jae Koo LEE
Japanese Journal of Applied Physics,
43 10 (2004) 7261-7266 PDF
file
12. Generation of low-energy neutral
beam for Si etching
S.J. Kim, S.J. Wang, J.K. Lee, D.H.
Lee and G.Y. Yeom
J. Vac. Sci. Technol, A 22(5) (2004)
1948-1955 PDF
file
13.Global warming gas emission
during plasma cleaning process of
silicon nitride using c-C4F8O/O2 chemistry
with additive Ar and N2
K.J. Kim, C.H. Oh, N.E. Lee, J.H.
Kim, J.W. Bae, G.Y. Yeom and S.S.
Yoon
J. Vac. Sci. Technol, B 22 2 (2004)
483-488 PDF
file
International Publications
2003
1.
Diagnostics of neutral species in the
low-angle forward-reflected neutral
beam etching system
M.J. Chung, D.H. Lee, and G.Y.
Yeom
Surface and Coatings Technology, 171
(2003) 231-236 PDF
file
2. Sapphire etching with BCl3/HBr/Ar
plasma
C.H. Jeong, D.W. Kim, H.Y. Lee,
H.S. Kim, Y.J. Sunh, and G.Y. Yeom
Surface and Coatings Technology, 171(2003)
280-284 PDF
file
3. Influence
ofsubstrate temperature on the etching
of silver films inductively coupled
Cl2-based plasmas
S.D.Park, Y.J.Lee, S.G.Kim,H.H.Choe,
M.P.Hong, G.Y.Yeom
Surface and Coatings Techonology, 171
(2003) 285-289 PDF
file
4. Characteristics
of Ag etching using inductively coupled
Cl2-based plasmas
Y.J. Lee, S.D. Park, B.K. Song,
S.G. Kim, H.H. Choe, M.P. Hong and G.Y.
Yeom
Jpn.J. Appl. Phys, 42 (2003) 286-290
PDF
file
5. The study
of atmospheric pressure plasma for surface
cleaning
C.H. Yi, Y.H. Lee, and G.Y. Yeom
Surface and Coatings Technology, 171
(2003) 237-240 PDF
file
6. Effects of
additive gases on Ag etching using inductively
coupled Cl2-based plasmas
S.D. Park, Y.J. Lee G.Y. Yeom,
S.G. Kim, H.H. Choe and M.P. Hong
Journal of the Korean Physical Society,
42 (2003) S804-S808 PDF
file
7. Internal
linear inductively coupled plasma (ICP)
sources for large area FPD etch process
applications
Y.J. Lee, K.N. Kim, B.K. Song,
and G.Y. Yeom
Materials Science in Semiconductor Processing
5, (2003) 419-423 PDF
file
8. Effects
of an atmospheric pressure plasma cleaning
on the outgassing characteristics of
MgO layer fo plasma display panel
B.K. Song, Y.J. Lee, C.H. YI,
H.K. Hwang and G.Y. Yeom
Jpn. J. Appl. Phys, 42 (2003) L74-L76
PDF
file
9. High rate sapphire etching using
BCl3-based inductively coupled plasma
D.W. Kim, C.H. Jeong, K.N. Kim,
H.Y. Lee, H.S. Kim and G.Y. Yeom, and
Y.J. Sung
Journal of the Korean Physical Society,
42, (2003) S795-S799 PDF
file
10.Effect of
N-based gases to C3F8/O2 on global warming
during silicon nitride PECVD chamber
cleaning using a remote plasma source
J.H. Kim, C.H. Oh, N.E. Lee,
and G.Y. Yeom
Journal of the Korean Physical Society,
42 (2003) S800-S803 PDF
file
11. A study of GaN etching characteristics
using HBr-based inductively coupled
plasmas
D.W.Kim, C.H.Jeong, H.Y.Lee,
H.S.Kim, Y.J.Sung, and G.Y.Yeom
Solid-State Electronics, 47 (2003) 549-552 PDF
file
12. Characteristic of a dielectric barrier
discharges using capillary dielectric
and its application to photoresist etching
C.H. Yi, Y.H. Lee, D.W. Kim,
and G.Y. Yeom
Surface and Coatings Technology, 163-164
(2003) 723-727 PDF
file
13. Etch damage evaluation of low-angle,
forward-reflected neutral beam etching
D.H. Lee, M.J. Chung, H.K. Hwang,
and G.Y. Yeom
Materials Science and Engineering, C23
(2003) 221-224 PDF
file
14.
High-rate dry etching of ZnO in BCl3/CH4/H2
plasmas
J.W. Bae, C.H. Jeong, H.K. Kim,
K.K. Kim, N.G. Cho, T.Y. Seong, S.J.
Park, Ilesanmi ADESIDA and G.Y. YEOM
Jpn. J. Appl. Phys, 42 (2003) L535-L537
PDF
file
15. Increase
of cleaning rate and reduction in global
warming effect during C4F8O/O2 remote
plasma cleaning of silicon nitride by
adding NO and N2O
C.H. Oh, N.E. Lee, J.H. Kim,
G.Y. Yeom, S.S. Yoon, and T.K. Kwon
Thin Solid Films, 435 (2003) 264-269
PDF
file
16. Linear internal inductively coupled
plasma (ICP) Source with magnetic fields
for large area processing
Y.J. Lee, K.N. Nam, B.K. Song,
and G.Y. Yeom
Thin Solid Films, 435 (2003) 275-279
PDF
file
17. High rate saphire (Al2O3) etching
in inductively coupled plasmas using
axial external magnetic field
D.W. Kim, C.H. Jeong, K.N. Kim,
H.Y. Lee, H.S. Kim, Y.J. Sung, and G.Y.
Yeom
Thin Solid Films, 435 (2003) 242-246
PDF
file
18. Effect of N-containing additive
gases on global warming gas emission
during remote plasma cleaning process
of silicon nitride PECVD chamber using
C4F8/O2/Ar chemistry
C.H. Oh, N.E. Lee, J.H. Kim,
G.Y. Yeom, S.S. Yoon, and T.K. Kwon
Surface and Coatings Technology, 171
(2003) 267-272 PDF
file
19. The etching mechanism of (Zr0.8Sn0.2)TiO4(ZST)
film by using Cl2/O2-gas plasma
K.H. Kwon, A.M. EFREMOV, G.Y.
Yeom, and Y.I. Kang
Journal of the Korean Physical Society,
42 (2003) S809-S813 PDF
file
20. Etch characteristics
of silver by inductively coupled fluorine-based
plasmas
S.D. Park, Y.J. Lee, S.G. Kim,
H.H. Choe, M.P. Hong, and G.Y. Yeom
Thin Solid Films 445, (2003) 138-143
PDF
file
21. Room temperature
GaN vertical cavity surface emitting
laser operation in an extended cavity
scheme
S.H. Park, J.H. Kim, H.S. Jeon,
Tan. Sakong, S.N. Lee, S.H. Chae, Y.
Park, C.H. Jeong, G.Y. Yeom,
and T.H. Cho
APPLIED PHYSICS LETERS, E 83 (2003)
11 PDF
file
International Publications
2002
1.
Dry etching of sapphire subsrtate
for device separation in chlorine-based
inductively coupled plasmas
C.H. Jeong, D.W. Kim, J.W.
Bae, Y.J. Sung, J.S. Kwak, Y.J. Park,
and G.Y.
Materials Science & Engineering,
B B93(1-3) (2002) 60-63 PDF
file
2. Particle-in-cell
simulation of a neutral beam source
for materials processing
M.S. Hur, S.J. Kim, H.S. Lee,
J.K. Lee, and G.Y. Yeom
IEEE Transactions on Plasma Science,
30(1,Pt.1) (2002) 110-111 PDF
file
3. Surface
properties of GaN fabricated by laser
lift-off and ICP etching
H.S. Kim, Martin D. Dawson,
and G.Y. Yeom
Journal of the Korean Physical Society,
40(4) (2002) 567-571 PDF
file
4. A study of sapphire etching characteristics
using BCl3-based inductively coupled
plasmas
C.H. Jeong, D.W. Kim, K.N.
Kim, and G.Y. Yeom
Japanese Journal of Applied Physics
Part1, 41(10) (2002) 6206-6208 PDF
file
5.C4F8O/O2
N-based additive gases for silicon
nitrid PECVD chamber cleaning with
low global warming potential
J.H. Kim, J.W. Bae, C.H. Oh,
K.J. Kim, N.E. Lee, and G.Y. Yeom
Japanese Journal of Applied Physics,
Part 1 41 (2002) 6570-6573 PDF
file
6. Study
on the low angle forward reflected
neutral beam etching system for SiO2
etching
M.J.Chung, D.H.Lee, and G.Y.Yeom
Thin Solid Films, 420-421 (2002) 579-583 PDF
file
7. Characteristics of a dielectric
barrier discharges using capillary
dielectric and its application to
surface cleaning
C.H. Yi, Y.H. Lee, D.W. Kim,
and G.Y. Yeom
Surface and Coatings Technology, 163-164
(2002) 723-727 PDF
file
8.
Effects of Tin concentration on the
electrical properties of room-temperature
ion-beam-assisted-evaporation-deposited
indium oxide thin films
J.W.. Bae, S.D. Park, N.G.
Cho, D.H.. Lee, and G.Y. Yeom
Japanese Journal of Applied Physics
Letter, Part 2 41 (2002) L999-L1001
PDF
file
9. Effect of N2O to C4F8/O2 on global
warming during silicon nitride PECVD
chamber cleaning using a remote inductively
coupled plasma source
J.H. Kim, C.H. Oh, N.E. Lee,
and G.Y. Yeom
Japanese Journal of Applied Physics
Letter, Part 2 41 (2002) L1495-L1498
PDF
file
10. Damage during SiO2 etching by
low-angle forward reflected neutral
beam
D.H. Lee, M.J. Chung,, S.D.
Park, and G.Y. Yeom
Japanese Journal of Applied Physics
Letter, Part 2 41 (2002) L1412-L1415 PDF
file
11. Effect of microstructures on the
coercivity of Fe1-xBx(0≤x≤0.2) films
prepared by dc magnetron sputtering
H.S. Shin, J.W. Hong, T.S.
Jang, E.P. Yoon, I.S. Kim, G.Y. Yeom,
and J.W. Park
Vacuum, 67 (2002) 185-189 PDF
file
International Publications
2001
1.
Development of a low angle forward reflected
neutral oxygen beam for materials processing
D.H Lee, J.W. Bae, S.D. Park,
and G.Y. Yeom
Thin Solid Films, 398-399 (2001) 647-651 PDF
file
2. A study of transparent indium tin
oxide(ITO) contact to p-GaN
D.W. Kim, Y.J. Sung, J.W Park,
and G.Y. Yeom
Thin Solid Films, 398-399 (2001) 87-92
PDF
file
3. Effect of
O2(CO2)/C4F8O gas combinations on global
warming gas emission in silicon nitride
PECVD plasma cleaning
B.H. Oh, J.W. Bae, J.H. Kim,
K.J. Kim, Y.S. Ahn, N.E. Lee, G.Y. Yeom,
S.S. Yoon, S.K. Chae, M.S. Ku,
S.G. Lee, and D.H. Cho
Surface and Coatings Technology, 146-147
(2001) 522-527 PDF
file
4. Investigation
of the outgassing characteristics of
the materials comprising a plasma display
panel
H.R. Han, Y.J. Lee, and G.Y.
Yeom
Journal of Vacuum Science & Technology
A, 19(4,Pt.1) (2001) 1099-1104 PDF
file
5. Indium-tin-oxide
thin film deposited by a dual ion beam
assisted e-beam evaporation system
J.W. Bae, J.S. Kim, and G.Y.
Yeom
Nuclear instruments & Methods in
Physics Research,Section B 178 (2001)
311-314 PDF
file
6. Etch
end-point detection of GaN-based devices
using optical emission spectroscopy
H.S. Kim, Y.J. Sung, D.W. Kim,
T. Kim, Dawson, M.D. and G.Y. Yeom
Materials Science & Engineering,
B, B82(1-3) (2001) 159-162 PDF
file
7. High rate etching
of sapphire wafer using Cl2/BCl3/Ar
inductively coupled plasmas
Y.J. Sung, H.S. Kim, Y.H. Lee,
J.W. Lee, S.H. Chae, Y.J. Park, and
G.Y. Yeom
Materials Science & Engineering,
B, B82(1-3) (2001) 50-52 PDF
file
8. Dry etching characteristics of ITO
thin films deposited on plastic substrates
Y.J. Lee, J.W. Bae, H.R.Han,
Kim,J.S Han, and G.Y. Yeom
Thin Solid
Films, 383(1,2) (2001) 281-283 PDF
file
9. The effects
of surface terminal bonds and microstructure
of SiO2 aerogel films on dry etching
S.J. Wang, H.H. Park, G.Y. Yeom,
and S.H. Hyun
Applied Surface Science, 169-170 (2001)
457-462 PDF
file
10. Etch characteristics of SrBi2Ta2O9(SBT)
thin films using magnetized inductively
coupled plasmas
Y.J. Lee, C.H. Jeong, J.W. Bae,
I.K. You, J.W. Park, and G.Y. Yeom
Thin Solid Films, 398-399 (2001) 652-656
PDF
file
11. Characteristics
of He/O2 atmospheric pressure glow discharge
and its dry etching properties of organic
materials
Y.H. Lee, C.H. Yi, M.J. Chung,
and G.Y. Yeom
Surface and Coatings Technology, 146-147
(2001) 474-479 PDF
file
12. Refractive sapphire microlenses
fabricated by chlorine-based inductively
coupled plasma etching
S.H. Park, H.S. Jeon, Y.J. Sung,
and G.Y. Yeom
Applied Optics, 40(22) (2001) 3698-3702
PDF
file
13. Characterization of an oxygen plasma
by using a Langmuir probe in an inductively
coupled plasma
J.D. Kim, G.H. Kim,T.H. Chung, G.Y.
Yeom, and K.H. Kwon
Journal of the Korean Physical Society,
38(3) (2001) 259-263 PDF
file
International Publications
2000
1.
A study of lead zirconate titanate etching
characteristics using magnetized inductively
coupled plasmas
Y.J. Lee, H.R. Han, J. Lee, and G.Y.
Yeom
Surface and Coatings Technology, 131(1-3)
(2000) 257-260 PDF
file
2. Etching
characteristics of lead magnesium niobate-lead
titanate(PMN-PT) relaxor ferroelectrics
J.W. Jang, Y.H. Lee, Y.J. Lee, J. Lee,
and G.Y. Yeom
Surface and coatings Technology, 131(1-3)
(2000) 252-256 PDF
file
3. A study
on the etch characteristics of ITO thin
film using inductively coupled plasmas
J.Y. Park, H.S. Kim, D.H. Lee, K.H.
Kwon, and G.Y. Yeom
Surface and Coatings Technology, 131(1-3)
(2000) 247-251 PDF
file
4. Properties
of amorphous tin-doped indium oxide
thin films deposited by O2/Ar mixture
ion beam-assisted system at room temperature
H.J. Kim, J.W. Bae, J.S. Kim, K.S. Kim,
Y.C. Jang, G.Y. Yeom, and N.E. Lee
Surface and Coatings Technology, 131(1-3)
(2000) 201-205 PDF
file
5. Tin-doped
indium oxide thin film deposited on
organic substrate using oxygen ion beam
assisted deposition
J.W. Bae,H.J. Kim, J.S. Kim. Y.H. Lee,
N.E. Lee, G.Y. Yeom, and Y.W. Ko
Surface and Coatings Technology, 131(1-3)
(2000) 196-200 PDF
file
6. Electrical,
optical, and structural characteristics
of ITO thin films by krypton and oxygen
dual ion-beam assisted evaporation at
room temperature
H.J. Kim, J.W. Bae, J.S. Kim, K.S. Kim,
Y.C. Jang, G.Y. Yeom, and N.E. Lee
Thin Solid Films, 377-378 (2000) 115-121
PDF
file
7. Effects
of oxygen radical on the properties
of indium tin oxide thin films deposited
at room temperature by oxygen ion beam
assisted evaporation
J.S. Kim, J.W. Bae, H.J. Kim, N.E.Lee,
G.Y. Yeom, and K.H.Oh
Thin Solid Films, 377-378 (2000) 103-108
PDF
file
8. Characteristics of magnetized inductively
coupled plasma source for flat panel
display applications
Y.J. Lee, H.R. Han, and G.Y. Yeom
Surface and Coatings Technology, 133-134
(2000) 612-616 PDF
file
9. Dry etch characteristics of Al-Nd
films for TFT-LCD
H.R. Han, Y.J. Lee, G.Y. Yeom, K.H.
Oh, and M.P. Hong
Surface and Coatings Technology, 133-134
(2000) 606-611 PDF
file
10. Magnetized inductively coupled plasma
etching of GaN in Cl2/BCl3 plasmas
Y.H. Lee, Y.J. Sung, G.Y. Yeom, J.W.
Lee, and T.I. Kim
Journal of Vacuum Science & Technology,A,
18(4, Pt.1) (2000) 1390-1394 PDF
file
11. Characterization of yttria-stabilized
zirconia thin films prepared by radio
frequency magnetron sputtering for a
combustion control oxygen sensor
J.W. Bae, J.Y. Park S.W. Hwang, G.Y.
Yeom, K.D. Kim,Y.A. Cho, J.S. Jeon,
and D. Choi
Journal of the Electrochemical Society,
147(6) (2000) 2380-2384 PDF
file
12. Effects
of oxygen ion beam plasma conditions
on the properties of indium tin oxide
thin films
J.W. Bae, H.J. Kim,Kim, J.S. Kim, N.E.
Lee, and G.Y. Yeom
Vacuum, 56(1) (2000) 77-81 PDF
file
13. Effects of plasma conditions on
the etch properties of AlGaN
H.S. Kim, D.H. Lee, J.W. Lee, T.I. Kim,
and G.Y. Yeom
Vacuum, 56(1) (2000) 45-49 PDF
file
14. Effects of H2 addition in magnetized
inductively coupled C2F6 plasma etching
of silica aerogel film
S.J. Wang, H.H. Park, and G.Y. Yeom
Japanese Journal of Applied Physics,
Part 1 39(12B) (2000) 7007-7010 PDF
file
15. Erratum:”Effects of BCl3 addition
on Ar/Cl2 gas in inductively coupled
plasmas for lead zirconate titanate
etching”
T. H. An, J.Y. Park, G.Y. Yeom, E.G.
Chang, and C.I. Kim
[J.Vac. Sci. Technol. A18, 1373(2000)].
J.Vac.Sci. Technol.,A, 18(6) (2000)
3012-3013 PDF
file
16. Etching
mechanism of (Ba.Sr)TiO3 films in high
density Cl2/BCl3/Ar plasma
S.B. Kim, Y.H. Lee, T.H. Kim, G.Y. Yeom,
and C.I. Kim
Journal of Vacuum Science & Technology,
A, 18(4, Pt.1) (2000) 1381-1384 PDF
file
17. Roles of
N2 gas in etching of platinum by inductively
coupled Ar/Cl2/N2 plasmas
J.H. Ryu, N.H. Kim, H.S. Kim, G.Y. Yeom,
E.G. Chang, and C.I. Kim
Journal of Vacuum Science & Technology,
A, 18(4, Pt.1) (2000) 1377-1380 PDF
file
18. Effects
of BCl3 addition on Ar/Cl2 gas in inductively
coupled plasmas for lead zirconate titanate
etchingEffects of BCl3 addition on Ar/Cl2
gas in inductively coupled plasmas for
lead zirconate titanate etching
T.H. An, J.Y. Park, G.Y. Yeom, E.G.
Chang, and C.I. Kim
Journal of Vacuum Science & Technology,
A 18(4, Pt.1) (2000) PDF
file
19. Etching
characteristics of SrBi2Ta2O9 film with
Ar/CHF3 plasma
J.W. Seo, D.H. Lee, W.J. Lee, B.G. Yu,
K.H. Kwon, G.Y. Yeom, E.G. Chang, and
C.I. Kim
Journal of Vacuum Science & Technology,
A18(4, Pt.1) (2000) PDF
file
20. Etch characteristics
of platinum using Cl2/Ar/O2 gas mixtures
K.K. Kwon, S.Y. Kang, G.Y. Yeom, N.K.
Hong, J.H. Lee
Journal of the Electrochemical Society,
147(5) (2000) 1807-1809 PDF
file
International Publications
1999
1. Characteristics
of inductively coupled Cl2/BCl3 plasmas
during GaN etching
H.S. Kim, G.Y. Yeom, J.W. Lee, and
T.I. Kim
Journal of Vacuum Science & Technology,
A 17(4, Pt.2) (1999) 2214-2219 PDF
file
2. Etching
characteristics of optical waveguides
using inductively coupled plasmas
with multidipole magnets
K.J. An, D.H. Lee, J.B. Yoo, J. Lee,
and G.Y. Yeom
Journal of Vacuum Science & Technology,
A 17(4, Pt.1) (1999) 1483-1487 PDF
file
3. Facet
formation of a GaN-based device using
chemically assisted ion-beam etching
with a photoresist mask
W.J. Lee, H.S. Kim, G.Y. Yeom, J.W.
Lee, and T.I. Kim
Journal of Vacuum Science & Technology,
A 17(4, Pt.1) (1999) 1230-1234 PDF
file
4. Effects of variously configured
magnets on the characteristics of
inductively coupled plasmas
S.W. Hwang, Y.J. Lee, H.R. Han, J.B.
Yoo, and G.Y. Yeom
Journal of Vacuum Science & Technology,
A 17(4, Pt.1) (1999) 1211-1216 PDF
file
5. A study on the characteristics
of inductively coupled plasma using
multidipole magnets and its application
to oxide etching
K.J. An, H.S. Kim, J.B. Yoo, and G.Y.
Yeom
Thin Solid Films, 341(1,2) (1999)
176-179 PDF
file
6. Effects
of CdS substrates on the physical
properties of polycrystalline CdTe
films
Y.H. Lee, W.J. Lee, Y.S. Kwon, G.Y.
Yeom, and J.K. Yoon
Thin Solid Films, 341(1,2) (1999)
172-175 PDF
file
7. Etch-induced
damage in single crystal Si trench
etching by planar inductively coupled
Cl2/N2 and Cl2/HBr plasmas
Y.J. Lee, S.W. Hwang, G.Y.
Yeom, J.W. Lee, and J.Y. Lee
Thin Solid Films, 341(1,2) (1999)
168-171 PDF
file
8. Low-voltage characteristics of
MgO-CaO films as a protective layer
for AC plasma display panels by e-beam
evaporation
J.H. Cho,R.W. Kim,K.E. Lee,C.Y. Son,G.Y.
Yeom,H.J.Kim,;Kim,Jung-Yeul;Park,Jong-Wan
Journal of Materials Science, 34(20)
(1999) 5055-5059 PDF
file
9. Effects
of etch-induced damage and contamination
on the physical and electrical properties
of cobalt silicides
H.S. Kim, J.K. Yoon, Y.H. Lee, Y.W.
Ko, J.W. Park, and G.Y. Yeom
Japanese Journal of Applied Physics,
Part 1, 38(10) (1999) 5788-5791 PDF
file
10. Effect of CaO addition on the
firing voltage of MgO films in AC
plasma display panels
J.H. Cho, R.H. Kim, K.W. Lee, G.Y.
Yeom, J.Y. Kim, and J.W. Park
Thin Solid Films, 350(1,2) (1999)
173-177 PDF
file
11. Study on surface reaction of (Ba,Sr)TiO3
thin films by high density plasma
etching
S.B. Kim, C.I. Kim, E.G. Chang, and
G.Y. Yeom
Journal of Vacuum Science & Technology,
A 17(4,Pt.2) (1999) 2156-2161 PDF
file
12. Tin oxide films deposited by ozone-assisted
thermal chemical vapor deposition
J.W. Bae, S.W. Lee, K.H. Song, J.I.
Park, K.J. Park, Y.W. Ko, and G.Y.
Yeom
Japanese Journal of Applied Physics,
Part1 38(5A) (1999) 2917-2920 PDF
file
13. Etch-induced
physical damage and contamination
during highly selective oxide etching
using C4F8/H2 helicon
H.S. Kim, W.J. Lee, G.Y. Yeom, J.H.
Kim, and K.W. Whang
Journal of the Electrochemical Society,
146(4) (1999) 1517-1522 PDF
file
14. Investigation of surface polymerization
on silicon exposed to C4F8 helicon
wave plasmas
W.J. Lee, H.S. Kim,G.Y. Yeom, and
J.T.Baek
Thin Solid Films, 341(1,2) (1999)
184-187 PDF
file
15. A study
of GaN etch mechanisms using inductively
coupled Cl2/Ar plasmas
H.S. Kim, G.Y. Yeom, A.W. Lee,
and T.I. Kim
Thin Solid Films, 341(1,2) (1999)
180-183 PDF
file
16. Thermal
stability enhancement of Cu/WN/SiOF/Si
multilayers by post-plasma treatment
of fluorine-doped silicon dioxide
S.H. Lee, D.J. Kim, S.H. Yang, J.W.
Park, S.I. Sohn, K.H. Oh, Y.T. Kim,
J.Y. Kim, G.Y. Yeom, and J.W. Park
Journal of Applied Physics, 85(1)
(1999) 473-477 PDF
file
International Publications
1998
1. Etch characteristics of GaN
using inductively coupled Cl2/Ar and
Cl2/BCl3 plasmas
Y.H. Lee, H.S. Kim, G.Y. Yeom, J.W.
Lee, M.C. Yoo, and T.I. Kim
Journal of Vacuum Science & Technology,
A, 16(3,Pt.2), 1478-1482 PDF
file
2. Etch properties
of gallium nitride using chemically
assisted ion beam etching(CAIBE)
W.J. Lee, H.S. Kim, J.W. Lee, T.I.
Kim, and G.Y. Yeom
Japanese Journal of Applied Physics,
Part 1, 37(12B) (1998) 7006-7009 PDF
file
3. Effects
of post annealing and oxidation processes
on the removal of damage generated
during the shallow trench etch process
Y.J. Lee,S.W. Hwang,K.H. Oho,J.Y.
Lee, and G.Y. Yeom
Japanese Journal of Applied Physics,
Part 1 37(12B) (1998) 6916-6921 PDF
file
4. A preliminary
study on the etching behavior of SiO2
aerogel film with CHF3 gas
S.J. Wang,H.H. Park, and G.Y. Yeom
Journal of the Korean Physical Society,
33 (1998) S135-S137 PDF
file
5. Effect
of O2 plasma treatment on the properties
of SiO2 aerogel film
H.R. Kim, H.H. Park,S.H.Hyun,G.Y.
Yeom
Thin Solid Films, 332(1-2) (1998)
444-448 PDF
file
6. Etching
properties of Pt thin films by inductively
coupled plasma.
K.H. Kwon,I. Chang, S.J. Yun,and G.Y.
Yeom
Journal of Vacuum Science & Technology,
A(1695) (1998) 2772-2776 PDF
file
International Publications 1997
1. Effects
of inductively coupled plasma conditions
on the etch properties of GaN and
ohmic contact formations H.S. Kim, Y.H. Lee, G.Y. Yeom,
J.W. Lee,and T.I. Kim
Materials Science & Engineering,
B50(1-3) (1997) 82-87 PDF
file
2. Physical
damage and contamination by magnetized
inductively coupled plasmas and effects
of various cleaning and annealing
methods
W.J. Nam, G.Y. Yeom. J.H. Kim, K.W.
Whang, and J.K. Yoon
Journal of Vacuum Science & Technology,
15(3,Pt.1) (1997) 590-595 PDF
file
3. Study of shallow silicon trench
etch process using planar inductively
coupled plasmas
J.H. Lee, G.Y.Yeom, J.W. Lee
Journal of Vacuum Science & Technology,
A15(3) (1997) 573-578 PDF
file
International Publications
1996
1.
Study of radiation damage and contamination
by magnetized inductively coupled plasma
etching
H.S. Kim, W.J. Nam, G.Y. Yeom, H.J.
Lee, J.H. Kim, and K.W. Whang
Journal of Vacuum Science & Technology,
A 14(3, Pt.1) (1996) 1026-1066 PDF
file
International Publications
1990
1.
Si/SiO2 Etch properties using CF4 and
CHF3 in RF Cylindrical Magnetron Discharges
G.Y. Yeom, and Mark J. Kushner
Appl. Phys. Lett. 56(9) 26 February
(1990) PDF
file
International Publications
1989
1. Cylindrical
magnetron discharges. Ⅰ. Current-Voltage
Characteristics for dc- and rf- driven
discharge sources
G.Y. Yeom, Mark J. Kushner, and John
A. Thornton
J. Appl. Phys. 65(10), 15 May (1989) PDF
file
2. Study
of radiation damage and contamination
by magnetized inductively coupled
plasma etching
G.Y. Yeom, Mark J. Kushner, and John
A. Thornton
J. Appl. Phys. 65(10), 15 May (1989) PDF
file
3. Magnetic
field effects on Cylindrical Magnetron
Reactive Ion Etching of Si/SiO2 IN
CF4 and CF4/H2 Plasmas
G.Y. Yeom, Mark J. Kushner, and John
A. Thornton
J. Vac. Sci. Technol., A7(3), May/Jun
(1989) PDF
file
International Publications
1988
1. Magnetic
field desogns for cylindrical-pist
magnetrin discharge sources
G.Y. Yeom, Alan S. Penfold, and John
A. Thornton
J. Vac. Sci. Technol., A6(6), (1988) PDF
file
International Publications 2010
