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[2017]

1. Chlorine-trapped CVD bilayer graphene for resistive pressure sensor with high detection limit and high sensitivity
2D Mater. 4 (2017) 025049
Viet Phuong Pham, Minh Triet Nguyen, Jin Woo Park, Sung Soo Kwak, Dieu Hien Thi Nguyen, Mu Kyeom Mun, Hoang Danh Phan, Doo San Kim, Ki Hyun Kim, Nae-Eung Lee and Geun Young Yeom

2. Atomic Layer Etching Mechanism of MoS2 for Nanodevices
ACS Appl. Mater. Interfaces 2017, 9, 11967−11976
Ki Seok Kim, Ki Hyun Kim, Yeonsig Nam, Jaeho Jeon, Soonmin Yim, Eric Singh, Jin Yong Lee, Sung Joo Lee, Yeon Sik Jung, Geun Young Yeom and Dong Woo Kim

3. Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells
ACS Appl. Mater. Interfaces 2017, 9, 3223−3245
Eric Singh, Ki Seok Kim, Geun Young Yeom and Hari Singh Nalwa

4. The enhancement of Hall mobility and conductivity of CVD graphene through radical doping and vacuum annealing
RSC Adv., 2017, 7, 16104–16108
Viet Phuong Pham, Anurag Mishra and Geun Young Yeom

5. Atomic layer etching of InGaAs by controlled ion beam
J. Phys. D: Appl. Phys. 50 (2017) 254007
Jin Woo Park, Doo San Kim, Mu Kyeom Mun, Won Oh Lee, Ki Seok Kim and Geun Young Yeom

6. Effect of Structure and Material Variation of Focus Ring for Enhanced Etch Resistance
Nanosci. Nanotechnol. Lett. 2017, Vol. 9, No. 1
Kyung Chae Yang, Sung Woo Park, Ho Seok Lee, Dong Woo Kim, and Geun Young Yeom

7. Photocatalytic Effect of Ag/TiO2 Nanotubes Fabricated Using 40 nm-Scale BCP Lithography
Nanosci. Nanotechnol. Lett. 2017, Vol. 9, No. 1
Da In Sung, Hyun Gu Kim, Seung Keun Cha, Dong Hyun Kim, Han-Bo-Ram Lee, Sang Ouk Kim, Dong Woo Kim and Geun Young Yeom

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[2016]

1. Linewidth Control and the Improved Adhesion of Inkjet-Printed Ag on Polyimide Substrate, Textured Using Near-Atmospheric Pressure Plasmas
Plasma processes and Polymers 13, 7
Mu Kyeom Mun, Jin Woo Park, and Geun Young Yeom

2. Silicon Surface Modification Using C4F8+O2 Plasma for Nano-Imprint Lithography
J Nanosci Nanotechnol. 11, 8749-55
Lee J, Efremov A, Lee J, Yeom GY, Kwon KH.

3. Influence of pulsed bias frequency on the etching of magnetic tunneling junction materials
Vacuum 127, 82-87
Kyung Chae Yang, Sung Woo Park, Min Hwan Jeon, Viet Phuong Pham, Du Yeong Lee, Tae Hun Shim, Jea Gun Park, Geun Young Yeom

4. Surface treatment process applicable to next generation graphenebased electronics
Carbon 104, 119-124
Ki Seok Kim, Hyo-Ki Hong, Hanearl Jung, Il-Kwon Oh, Zonghoon Lee, Hyungjun im,
Geun Young Yeoma, Kyong Nam Kim

5. A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique
Advanced Materials 28, 24, 4824-4831
Seo-Hyeon Jo, Dong-Ho Kang, Jaewoo Shim, Jaeho Jeon, Min Hwan Jeon, Gwangwe Yoo, Jinok Kim, Jaehyeong Lee, Geun Young Yeom, Sungjoo Lee, Hyun-Yong Yu, Changhwan Choi, Jin-Hong Park

6. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment
Appl. Phys. Lett. 108, 213102
Ki Seok Kim, Il-Kwon Oh, Hanearl Jung, Hyungjun Kim, Geun Young Yeom and Kyong Nam Kim

7. Characteristics of silicon nitride deposited by VHF (162MHz)-plasma enhanced chemical vapor deposition using a multi-tile push–pull plasma source
Journal of Physics D: Applied Physics. 49, 395201
Ki Seok Kim, Nishant Sirse, Ki Hyun Kim, Albert Rogers Ellingboe, Kyong Nam Kim and Geun Young Yeom

8. High-Performance 2D Rhenium Disulfi de (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
Adv. Mater. 28, 6985–6992
Jaewoo Shim , Aely Oh , Dong-Ho Kang , Seyong Oh , Sung Kyu Jang , Jaeho Jeon , Min Hwan Jeon , Minwoo Kim , Changhwan Choi , Jaehyeong Lee , Sungjoo Lee , Geun Young Yeom , Young Jae Song , and Jin-Hong Park

9. Etching of Magnetic Tunnel Junction Materials Using Reactive Ion Beam
J. Nanosci. Nanotechnol. 16, 11
Min Hwan Jeon, Kyung Chae Yang, JinWoo Park, Deok Hyun Yun, Kyong Nam Kim, and Geun Young Yeom

10. Recent Advances in Doping of Molybdenum Disulfide:Industrial Applications and Future Prospects
Adv. Mater. 28, 9024–9059
Viet Phuong Pham and Geun Young Yeom

11. Transient plasma potential in pulsed dual frequency inductively coupled plasmas and effect of substrate biasing
AIP Advances 6, 095101
Anurag Mishra and Geun Young Yeom

12. Purification of Graphene Flakes by Using Radio-Frequency Thermal Ar Plasma
Science of Advanced Materials, 8, 4
Oh, Jong Sik; Oh, Ji Soo; Shin, Myoung Sun; Lee, Kyu Hang; Kim, Jung Gil; Choi, Sung Yong; Kim, Seong In; Lee, Se Han; Yeom, Geun Young; Kim, Kyong Nam

13. Very high frequency plasma reactant for atomic layer deposition
Applied Surface Science 387, 109–117
Il-Kwon Oh, Gilsang Yoo, Chang Mo Yoon, Tae Hyung Kim, Geun Young Yeom,Kangsik Kim, Zonghoon Lee, Hanearl Jung, Chang Wan Lee, Hyungjun Kim,Han-Bo-Ram Lee

14. Simple Fabrication of Pillar Silicon Nanostructures by a Contact Block Copolymer Technique
J. Nanosci. Nanotechnol. 16, 11
Hwa Sung Kim, JinWoo Park, Deok Hyun Yun, Doo San Kim, and Geun Young Yeom

15. Evaluation of a ferroelectric tunnel junction by ultraviolet–visible absorption using a removable liquid electrode
Nanotechnology 27, 215704
Hong-Sub Lee, Kyung-Mun Kang, Geun Young Yeom and Hyung-Ho Park

16. Size-tunable synthesis of monolayer MoS 2 nanoparticles and their applications in non-volatile memory devices
Nanoscale 8, 16995–17003
Jaeho Jeon, Jinhee Lee, Gwangwe Yoo, Jin-Hong Park, Geun Young Yeom, Yun Hee Jang and Sungjoo Lee

17. Fabrication of 50 nm scale Pt nanostructures by block copolymer (BCP) and its characteristics of surface-enhanced Raman scattering (SERS)
RSC Adv. 6, 70756–70762
Jae Hee Shin, Hyun Gu Kim, Gwang Min Baek, Reehyang Kim, Suwan Jeon, Jeong Ho Mun, Han-Bo-Ram Lee, Yeon Sik Jung, Sang Ouk Kim, Kyoung Nam Kim and Geun Young Yeom

18. Atmospheric pressure plasmas for surface modification of flexible and printed electronic devices: A review
Thin Solid Films 598, 315–334
Kyong Nam Kim, Seung Min Lee, Anurag Mishra, Geun Young Yeom

19. Improvement of a block co-polymer (PS-b-PMMA)-masked silicon etch profile using a neutral beam
Deokhyun Yun, Jinwoo Park, Hwasung Kim, Jeongho Mun, Sangouk Kim, Kyongnam Kim and Geunyoung Yeom
Nanotechnology 27 384002

20. Electron density modulation in a pulsed dual-frequency (2/13.56 MHz) dual-antenna inductively coupled plasma discharge
J. Vac. Sci. Technol. A 34, 5
Nishant Sirse, Anurag Mishra, Geun Y. Yeom, Albert R. Ellingboe

21. Improved Adhesion Between Copper and Prepreg Using Plasma Press Process
Science of Advanced Materials, 8, 10
Kim, Doo-San, Mun, Mu-Kyeom and Yeom, Geun-Young

22. Low Global Warming Potential Alternative Gases for Plasma Chamber Cleaning
Science of Advanced Materials, 8, 12
Yang, Kyung-Chae, Park, Sung-Woo and Yeom, Geun-Young

23. Etch Characteristics of SiO2 Using Pulsed Triple-Frequency for Ar/C4F6/O2 Capacitive Coupled Plasmas
J. Nanosci. Nanotechnol. 16, 11
M. H. Jeon, J. W. Park, T. H. Kim, D. H. Yun, K. N. Kim, and G. Y. Yeom

24. Thickness-dependent growth orientation of F-doped ZnO films formed by atomic layer deposition
J. Vac. Sci. Technol. A 34, 1
Kyung-Mun Kang, Yong-June Choi, Geun Young Yeom, and Hyung-Ho Park

25. Low Energy BCl3 Plasma Doping of Few-Layer Graphene
Sci. Adv. Mater. 8, 4
Viet Phuong Pham, Doo San Kim, Ki Seok Kim, Jin Woo Park, Kyung Chae Yang, Se Han Lee, Geun Young Yeom and Kyong Nam Kim

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[2015]

1. Study on contact distortion during high aspect ratio contact SiO2 etching
Journal of Vacuum Science & Technology A 33, 021303 (2015); doi: 10.1116/1.4901872
Jong Kyu Kim, Sung Ho Lee, Sung Il Cho, and Geun Young Yeom

2. Low damage etching method of low-k material with a neutral beam for interlayer dielectric of semiconductor device
Journal of Vacuum Science & Technology A 33, 021309 (2015); doi: 10.1116/1.4905736
Seung Hyun Kang, Jong Kyu Kim, Sung Ho Lee, Jin Woo Kim, and Geun Young Yeom

3. Etching mechanisms of (In, Ga, Zn)O thin films in CF4/Ar/O2 inductively coupled plasma
Journal of Vacuum Science & Technology A 33, 031601 (2015); doi: 10.1116/1.4913735
Kwangsoo Kim, Alexander Efremov, Junmyung Lee, Kwang-Ho Kwon, and Geun Young Yeom

4. A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications
Thin Solid Films 579 (2015) 136–143
Inwoo Chun, Alexander Efremov, Geun Young Yeom, Kwang-Ho Kwon

5. Wide-Range Controllable n‑Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation
ACSNANO VOL.9 NO.3 2368–2376 2015
Hyung-Youl Park, Myung-Hoon Lim, Jeaho Jeon, Geun Young Yeom and Jin-Hong Park

6. In situ synthesis of MoS2 on a polymer based gold electrode platform and its application in electrochemical biosensing
RSC Adv., 2015, 5, 10134
Hyeong-U Kim, Hyeyoun Kim,Geun Young Yeom, Min-Ho Lee and Taesung Kim

7. Controllable Nondegenerate p‑Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane
ACSNANO VOL.9 NO.2 1099–1107 2015
Dong-Ho Kang, Jaewoo Shim, Sung Kyu Jang, Min Hwan Jeon, Geun Young Yeom and Jin-Hong Park

8. Low Energy BCl3 Plasma Doping of Few-Layer Graphene
Science of Advanced Materials Vol. 7, pp. 1–7, 2015
Viet Phuong Pham, Doo San Kim, Ki Seok Kim, Jin Woo Park, Kyung Chae Yang,Se Han Lee, Geun Young Yeo

9. Chlorine Radical Doping of a Few Layer Graphene with Low Damage
ECS Journal of Solid State Science and Technology, 4 (6) N5095-N5097 (2015)
Kyong Nam Kim, Viet Phuong Pham, and Geun Young Yeom

10. Low damage pre-doping on CVD graphene/Cu using a chlorine inductively coupled plasma
Carbon 95 (2015) 664e671
Viet Phuong Pham, Ki Hyun Kim, Min Hwan Jeon, Se Han Lee, Kyong Nam Kim, Geun Young Yeom

11. Effect of pulse phase lag in the dual synchronized pulsed capacitive coupled plasma on the etch characteristics of SiO2 by using a C4F8/Ar/O2 gas mixture
Vacuum 121 (2015) 294e299
Min Hwan Jeon, Kyung Chae Yang, Kyong Nam Kim, Geun Young Yeom

12. Atmospheric presure plasmas for surface modification of flexible and printed electronic device:A review
Thin Soild Films
Kyong Nam Kim, Seung Min Lee, Arurag Mishra, Geun young Yeom

13. Controlled Layer-by-Layer Etching of MoS2
Applied Material & Interfaces
TaiZhe Lin, BaoTao Kang, MinHwan Jeon, GeunYoung Yeom, and KyongNam Kim

14. Controlled MoS2 layer etching using CF4 plasma
Nanotechnology26 (2015)
Minhwan Jeon, Chisung Ahn, HyeongU Kim, Kyong Nam Kim, and Geun Young Yeom

15. Etch characteristics of magnetic tunnel junction materials using substrate heating in the pulse-biased inductively coupled plasma
Journal of Vacuum Science & Technology A
Min Hwan Jeon, Kyung Chae Yang, Sehan Lee, and Geun Young Yeom

16. Ion energy distributions in a pulsed dual frequency inductively coupled discharge of Ar/CF4 and effect of duty ratio
Physics of Plasmas 22, 083514 (2015)
Anurag Mishra, Jin Seok Seo, Tae Hyung Kim, and Geun Young Yeom

17. Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
Applied materials & interfaces
Hong Sub Lee, Wooje Han, Hee Yoon Chung, Geun Young Yeom, and Hyung Ho Park

18. Surface Modification of block Copolymer Through Surfur Containing Plasma Treatment
Journal of Nanoscience and Nanotechnology, Vol. 15, 8093-8098, 2015
Sang Wook Choi, Jae Hee Shin, Min Hwan Jeon, Geun Young Yeom, and Kyong Nam Kim

19. Roughening of Polyimide Surface for Inkjet Printing by Plasma Etching Using the Polymide Masked with Polystyrene nanosphere Array
Journal of Nanoscience and Nanotechnology, Vol. 15, 8176-8182, 2015
Mu Kyeom Mun, JinWoo Park, Jin Ho Ahn, Ki Kang Kim, and Geun Young Yeom

20. Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns
Journal of Nanoscience and Nanotechnology Vol. 15, 8340-8347, 2015
Junmyung Lee, Alexander Efremov, Geun Young Yeom, Nomin Lim, and Kwang-Ho Kwon

21. Investigation into influence of interfacial changes on the resistive switching of Pr0.7Ca0.3MnO3
Journal of Physics D Applied Physic, November 2015
Hong-sub Lee, Geun Young Yeom, and Hyung-Ho Park

22. Plasma Characteristics Using Superimposed Dual Frequcncy Inductively Coupled Plasma Source for Next Generation Device Processing
Journal of Nanoscience and Nanotechnology, Vol.15, 8674-8678, 2015
Seung Min Lee, Chul Hee Lee, Tae Hyung Kim, Geun Young Yeom, and Kyong Nam Kim

23. Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O2/N2/CHF3 Plasma
Journal of Nanoscience and Nanotechnology, Vol 15. 8577-8583, 2015
Min Hwan Jeon, Jin Woo Park, Deok Hyun Yun, Kyung Nam Kim, and Geun Young Yeom.

24. Nano-Welding of Ag Nanowires Using Rapid Thermal Annealing for Transparent Conductive Films
Journal of Nanoscience and Nanotechnology Vol. 15, 8647-8651, 2015
Jong Sik Oh, Ji Soo Oh, Jae Hee Shin, Geun Young Yeom, and Kyong Nam Kim

25. Effect of Embedded RF Pulsing for Selective Etching of SiO2 in the Dual-Frequency Capacitive Coupled Plasmas
Journal of Nanoscience and Nanotechnology, Vol. 15, 8667-8673, 2015
Nam Hun Kim, Min Hwan Jeon, Tae Hyung Kim, and Geun Young Yeom

26. Silicon Surface Modification Using C4F8+O2 Plasma for Nano-Imprint Lithography
Journal of Nanoscience and Nanotechnology, Vol. 15, 8749-8755, 2015Journal of Nanoscience and Nanote
Junmyung Lee, Alexander Efremov, Jaemin Lee, Geun Young Yeom, and Kwang-Ho Kwon

27. Etch residue removal of CoFeB using CO/NH3 reactive ion beam for spin tranfer torque-magnetic random access meomory device
Journal of Vaccum Science & Technology B
Min Hwan Jeon, Kyung Chae Yang, Jin Woo Park, Deok Hyun Yun, Kyong Nam Kim, and Geun Young Yeom

28. Thickness-dependent growth orientation F-doped ZnO films formed by atomic layer deposition
Journal of Vaccum Science & Technology A
Kyung-Mun Kang, Yong-June Choi, Geun Young Yeom, and Hyung-Ho Park

29. Measurement of nc-Si:H film uniformity and diagnosis of plasma spatial structure produced by a very high frequency, differentially powered,multi-tile plasma source
Vaccum 119 (2015) 34-46
E.Monaghan, G.Y.Yeom, A.R.Ellingboe

30. Chemical Vapor Deposition of Inorganic Thin Film using Atmospheric Plasma:A Review of Research Trend
ISSN 1225-8024
Kyong Nam Kim, Seung Min Lee, and Geun Young Yeom

31. Appilcation of Pulsed Plasmas for Nanoscale Etching of Semiconductor Device: A review
ISSN 1225-8024
Kyung Chae Yang, Sung Woo Park, Tae Ho Shin, and Geun Young Yeom.

32. Low-temperature Synthesis of Large-Scale Molybdenum Disulfide Thin Films Directly on a Plastic Substrate Using Plasma-Enhanced Chemical Vapor Deposition
Advanced Materials 2015, 27, 5223-5229
Chisung Ahn, Jinhwan Lee, Hyeong-U Kim, Hunyoung Bark, Geun Young Yeom, Changgu Lee, and Taesung Kim

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[2014]

1. Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III–V MOS devices
Microelectronic Engineering 114 (2014) 121–125
K.S. Min, S.H. Kang, J.K. Kim, J.H. Yumg, Y.I. Jhon, T.W. Hudnall, C.W. Bielawski, G.Y. Yeom

2. On the LPCVD-Formed SiO2 Etching Mechanism in CF4ArO2 Inductively Coupled Plasmas Effects of Gas Mixing Ratios and Gas Pressure
Plasma Chem Plasma Process (2014) 34:239–257
Jinyoung Son, Alexander Efremov, Inwoo Chun, Geun Young Yeom and Kwang-Ho Kwon

3. Orientation dependence of the fracture behavior of graphene
CARBON 66 (2014) 619–628
Young I. Jhon, Young Min Jhon, Geun Y. Yeom, Myung S. Jhon

4. Graphene Doping Methods and Device Applications
Journal of Nanoscience and Nanotechnology Vol. 14, 1120–1133, 2014
Jong Sik Oh, Kyong Nam Kim and Geun Young Yeom

5. A study on the etching characteristics of magnetic tunneling junction materials
Japanese Journal of Applied Physics 54, 01AE01 (2015)
Kyung Chae Yang, Min Hwan Jeon, and Geun Young Yeom

6. Cyclic chlorine trap-doping for transparent, conductive, thermally stable and damage-free graphene
Nanoscale
Viet Phuong Pham, Kyong Nam Kim, Min Hwan Jeon, Ki Seok Kim and Geun Young Yeom

7. Etch Characteristics of Magnetic Tunnel Junction Materials Using Bias Pulsing in the CH4-N2O Inductively Coupled Plasma
Journal of Nanoscience and Nanotechnology Vol. 14, 9541–9547, 2014
Min Hwan Jeon, Ji Youn Youn, Kyung Chae Yang, Deok Hyun Yun and Geun Young Yeom

8. Effect of RF Pulsing Biasing on the Etching of Magnetic Tunnel Junction Materials Using CH3OH
Journal of Nanoscience and Nanotechnology Vol. 14, 9680–9685, 2014
Min Hwan Jeon, Deok Hyun Yun, Kyung Chae Yang, Ji Youm Youn and Geun Young Yeom

9. Characteristics of pulsed dual frequency inductively coupled plasma
Japanese Journal of Applied Physics 54, 01AA10 (2015)
Jin Seok Seo, Kyoung Nam Kim, Ki Seok Kim, Tae Hyung Kim and Geun Young Yeo

10. Characteristics of Pulsed Internal Inductively Coupled Plasma for Next Generation Display Processing
Journal of Nanoscience and Nanotechnology Vol. 14, 9614?9618, 2014
Tae Hyung Kim, Seung Min Lee, Chul Hee Lee, Jeong Oun Bae, Geun Young Yeom and Kyong Nam Kim

11. Effect of source frequency and pulsing on the SiO2 etching characteristics of dual-frequency capacitive coupled plasma
Japanese Journal of Applied Physics 54, 01AE07 (2015)
Hoe Jun Kim, Min Hwan Jeon, Anurag Kumar Mishra, In Jun Kim, Tae Ho Sin and Geun Young Yeom

12. Etching characteristics and mechanisms of Mo thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas
Japanese Journal of Applied Physics 53, 116201 (2014)
Nomin Lim, Alexander Efremov, Geun Young Yeom, Bok-Gil Choi and Kwang-Ho Kwo

13. Graphene Treatment Using a Very Low Energy Ar+ Ion Beam for Residue Removal
Journal of Nanoscience and Nanotechnology Vol. 14, 9108?9113, 2014
Kyoung Seok Min, Ki Seok Kim, Kyoung Nam Kim, Anurag Mishra and Geun Young Yeom

14. On the Etching Characteristics and Mechanisms of HfO2 Thin Films in CF4/O2/Ar and CHF3/O2/Ar Plasma for Nano-Devices
Journal of Nanoscience and Nanotechnology Vol. 14, 9670?9679, 2014
Nomin Lim, Alexander Efremov, Geun Young Yeom and Kwang-Ho Kwon

15. Study on contact distortion during high aspect ratio contact SiO2 etching
Journal of Vacuum Science & Technology A 33, 021303 (2015)
Jong Kyu Kim, Sung Ho Lee, Sung Il Cho, and Geun Young Yeom

16. Surface Degradation Mechanism During the Fluorine-Based Plasma Etching of a Low-k Material for Nanoscale Semiconductors
Journal of Nanoscience and Nanotechnology Vol. 14, 2014
Jong Kyu Kim, Seung Hyun Kang, Sung Il. Cho, Sung Ho Lee, Kyong Nam Kim and G. Y. Yeom

17. Temporal evolution of electron density in a low pressure pulsed two-frequency 60 MHz/2 MHz) capacitively coupled plasma discharge
Plasma Sources Sci. Technol. 23 (2014) 065046 (8pp)
N Sirse, M H Jeon, G Y Yeom and A R Ellingboe

18. Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam
Applied Physics Letters 105, 093104 (2014)
Young I. Jhon, Kyung S. Min, G. Y. Yeom, and Young Min Jhon

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[2013]

1. Characteristics of the electromagnetic interference shielding effectiveness of Al-doped ZnO thin films deposited by atomic layer deposition
Applied Surface Science 269 , pp. 92-97
Choi, Y.J., Gong, S.C., Johnson, D.C., Golledge, S., Yeom, G.Y., Park, H.H.

2. Analysis and modeling of the optical endpoint signal for precision etching
Journal of the Korean Physical Society 62 (1) , pp. 53-58
Kim, Y.J., Kim, K.N., Yeom, G.Y.

3. Modulation of electron energy distributions and discharge parameters in a dual frequency ICP discharge
Plasma Sources Science and Technology 22 (1) , art. no. 015022
Mishra, A., Kim, T.H., Kim, K.N., Yeom, G.Y.

4. Nanometer-scale fabrication of hydrogen silsesquioxane (HSQ) films with post exposure baking
Journal of Nanoscience and Nanotechnology 13 (3) , pp. 1918-1922
Kim, D.H., Kang, S.K., Yeom, G.Y., Jang, J.H.

5. Study on the etching characteristics of amorphous carbon layer in oxygen plasma with carbonyl sulfide
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 31 (2) , art. no. 021301
Kim, J.K., Cho, S.I., Kim, N.G., Jhon, M.S., Min, K.S., Kim, C.K., Yeom, G.Y.

6. Improvement of metal gate high k dielectric CMOSFETs characteristics by atomic layer etching of high k gate dielectric
Solid-State Electronics 82 , pp. 82-85
Min, K.S., Park, C., Kang, C.Y., Park, C.S., Park, B.J., Kim, Y.W., Lee, B.H., (...), Yeom, G.Y.

7. Optoelectronic Characteristics of Organic Light-Emitting Diodes with a Rb2CO3-Mixed C60 Layer as an Electron Ohmic-Contact
Journal of the Electrochemical Society 160 (1) , pp. G1-G5
Lim, J.T., Park, J.W., Kwon, J.W., Yeom, G.Y., Lhm, K., Lee, K.J.

8. Effect of sputtering power on the properties of ZnO:Ga transparent conductive oxide films deposited by pulsed DC magnetron sputtering with a rotating cylindrical target
Applied Surface Science 271 , pp. 216-222
Ahn, K.-J., Park, J.-H., Shin, B.-K., Lee, W., Yeom, G.Y., Myoung, J.-M.

9. Electron-injecting properties of Rb2CO3-doped Alq3 thin films in organic light-emitting diodes
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 31 (3) , art. no. 031101
Park, J.W., Lim, J.T., Oh, J.S., Kim, S.H., Viet, P.P., Jhon, M.S., Yeom, G.Y.

10. Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III-V MOS devices
Microelectronic Engineering
Min, K.S., Kang, S.H., Kim, J.K., Jhon, Y.I., Jhon, M.S., Yeom, G.Y.

11. Improved Performance of Organic Light-Emitting Diodes Fabricated on Al-Doped ZnO Anodes Incorporating a Homogeneous Al-Doped ZnO Buffer Layer Grown by Atomic Layer Deposition
ACS Applied Materials and Interfaces 5 (9) , pp. 3650-3655
Choi, Y.J., Gong, S.C., Park, C.S., Lee, H.S., Jang, J.G., Chang, H.J., Yeom, G.Y., Park, H.H.

12. Degradation and modification of stainless-steel surface using Cl2/Ar inductively coupled plasma
Applied Surface Science
Jang, H., Efremov, A., Yun, S.J., Yeom, G.Y., Kim, K.B., Kwon, K.H.

13. Interfacial electronic structure of molybdenum oxide on the fullerene layer, a potential hole-injecting layer in inverted top-emitting organic light-emitting diodes
Current Applied Physics 13 (6) , pp. 1037-1041
Lim, J.T., Park, J.W., Yeom, G.Y.

14. Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge
J. Phys. D: Appl. Phys. 46 (2013) 235203 (9pp)
Anurag Mishra, Jin Seok Seo, Kyong Nam Kim, Geun Young Yeom

15. Study of the Electronic Structure of the Interfaces Between 2-TNATA and MoOx
Journal of Nanoscience and Nanotechnology Vol. 13, 8025–8031, 2013
J. T. Lim, J. W. Park, M. S. Jhon and G. Y. Yeom

16. Study of Hydrogenated Silicon Thin Film Deposited by Using Dual-frequency
Journal of the Korean Physical Society, Vol. 63, No. 6, September 2013, pp. 1140∼1145
Ho Beom Jeong and Kyong Nam Kim, Nae Eung Lee and Geun Young Yeom

17. Selective Etching of Magnetic Tunnel Junction Materials Using CO/NH3 Gas Mixture in Radio Frequency Pulse-Biased Inductively Coupled Plasmas
Japanese Journal of Applied Physics 52 (2013) 05EB03
Min Hwan Jeon, Hoe Jun Kim, Kyung Che Yang, Se Koo Kang, Kyong Nam Kim, and Geun Young Yeom

18. Plasma Treatment of Thin Film Coated with GrapheneFlakes for the Reduction of Sheet Resistance
Journal of Nanoscience and Nanotechnology Vol. 13, 8090–8094, 2013
Sung Hee Kim, Jong Sik Oh, Kyong Nam Kim, Jin Seok Seo, Min Hwan Jeon, Kyung Chae Yang, and G Y Yeom

19. Plasma Characteristics of Inductively Coupled Plasma Using Dual-Frequency Antennas
Japanese Journal of Applied Physics 52 (2013) 05EA02
Tae Hyung Kim, Kyong Nam Kim, Anurag Kumar Mishra, Jin Seok Seo, Ho Boem Jeong, J O Bae and G Y Yeom

20. Orientation dependence of the fracture behavior of graphene
CARBON 66 619–628
Young I. Jhon, Young Min Jhon, Geun Y. Yeom, Myung S. Jhon

21. Investigation of the Properties of Ba-Substituted La0.7Sr0.3ꠓxBaxMnO3 Perovskite Manganite Films for Resistive Switching Applications
Journal of ELECTRONIC MATERIALS, Vol. 42, No. 6, 2013
SUN GYU CHOI, HONG-SUB LEE, GEUN YOUNG YEOM, and HYUNG-HO PARK

22. High open-circuit voltage of graphene-based photovoltaic cells modulated by layer-by-layer transfer
Published online in Wiley Online Library
Kyuwook Ihm, Kyung-Jae Lee, Jong Tae Lim, Tai-Hee Kang, Sukmin Chung, Byung Hee Hong and Geun Young

23. Grain boundaries orientation effects on tensile mechanics of polycrystalline graphene
RSC Advances
Young I. Jhon, Pil Seung Chung, Robert Smith, Kyung S. Min ,a Geun Y. Yeom and Myung S. Jhon

24. Formation of Gallium Vacancies and Their Effects on the Nanostructure of Pd/Ir/Au Ohmic Contact to p-Type GaN
Journal of Nanoscience and Nanotechnology Vol. 13, 8106–8109, 2013
Kyong Nam Kim, Tae Hyung Kim, Jin Seok Seo, Ki Seok Kim, Jeong Woon Bae, and Geun Young Yeom

25. Effect of bias frequency variation on the characteristics of SiOX thin films deposited by atmospheric pressure chemical vapor deposition using a double discharge system
Thin Solid Films 539 (2013) 12–17
Jaebeom Park, Ga Young Kim, Geunyoung Yeom

26. Dual frequency ICP discharges: Effect of pressure and gas ratio on EEPF and discharge parameters
Surface & Coatings Technology 237 (2013) 440–444
Anurag Mishra, Geun Young Yeom

27. Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices
Journal of Vacuum Science & Technology A 31, 061310 (2013)
Jong Kyu Kim, Sung Il Cho, Sung Ho Lee, Chan Kyu Kim, Kyung Suk Min, Seung Hyun Kang, and Geun Young

28. Characteristics of SiO2 etching by using pulse-time modulation in 60 MHz/2 MHz dual-frequency capacitive coupled plasma
Current Applied Physics 13 (2013) 1830e1836
M.H. Jeon , A.K. Mishra , S.-K. Kang , K.N. Kim , I.J. Kim , S.B. Lee , T.H. Sin , G.Y. Yeom

29. Characteristics of Ga-doped ZnO films deposited by pulsed DC magnetron sputtering at low temperature
Materials ScienceinSemiconductorProcessing16(2013)1957–1963
Kyung-JunAhn, SanghunLee, Won-JeongKim, GeunYoungYeom, WoongLee

30. Atomic layer etching removal of damaged layers in a contact hole for low sheet resistance
Journal of Vacuum Science & Technology A 31, 061302 (2013)
Jong Kyu Kim, Sung Il Cho, Sung Ho Lee, Chan Kyu Kim, Kyung Suk Min, and Geun Young Yeom

31. Aluminum-doped zinc oxide formed by atomic layer deposition for use as anodes in organic light emitting diodes
Journal of Vacuum Science & Technology A 31, 01A101 (2013)
Su Cheol Gong, Yong-June Choi, HC Kim, CS Park, HH Park, JG Jang, HJ Chang, and Geun Young Yeom

32. Effect of Plasma-Nitric Acid Treatment on the Electrical Conductivity of Flexible Transparent Conductive Films
Japanese Journal of Applied Physics 52 (2013) 075102
Viet Phuong Pham, Y W Jo, J S Oh, S M Kim, J W Park, S H Kim, M S Jhon and Geun Young Yeom

33. Enhanced Light Extraction from GaN-Based Vertical Light-Emitting Diodes with a Nano-Roughened N-GaN Surface Using Dual-Etch
Journal of Nanoscience and Nanotechnology Vol. 13, 8064–8069, 2013
Tae Hyung Kim, Kyong Nam Kim, Jin Seok Seo1, Ki Seok Kim, Jeong Oun Bae, and Geun Young Yeom

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[2012]

1. Linear inductive antenna design for large area flat panel display plasma processing
MICROELECTRONIC ENGINEERING, 89, (10), pp133
K.N. Kim , J.H. Lim , H.B. Jeong, S.H. Lee, J.K. Lee, S.H. Lee, J.K. Lee

2. Atomic layer etching of graphene for full graphene device fabrication
Carbon, 50, (2), pp429-435
Woong Sun Lim, Yi Yeon Kim, HG Kim, SJ Jang, NY Kwon, BJ Park, JH Ahn, LS Chung, BH Hong, G Y Yeom

3. Atomistic simulation method in head-disk interface of magnetic data storage systems
Journal of Applied Physics, 111, (7), pp07B717-07B719
Robert L. Smith, Pil Seung Chung, Sesha Hari Vemuri, Geun-Young Yeom, Lorenz T. Biegler

4. Polymer surface texturing for direct inkjet patterning by atmospheric pressure plasma treatment
Soft Matter, 8, 18, pp5020-5026
Jae Beom Park, Jae Yong Choi, Suk Han Lee, Yong Seol Song and Geun Young Yeom

5. Synergetic effects in a discharge produced by a dual frequency–dual antenna large-area ICP source
PLASMA SOURCES SCIENCE & TECHNOLOGY, 21, 3, pp35018-35024
Anurag Mishra, Kyong Nam Kim, Tae Hyung Kim and Geun Young Yeom

6. Study of Atmospheric Pressure Chemical Vapor Deposition by Using a Double Discharge System for
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 61, 3, pp397-401
Ga Young Kim, Jae Beom Park, Geun Young Yeom

7. Characteristics of SiOX thin films deposited by atmospheric pressure chemical vapor deposition
MATERIALS RESEARCH BULLETIN, 47, 10, pp3011-3014
Jaebeom Park, Jongsik Oh, Elly Gil, Geun Young Yeom

8. An investigation of the temporal evolution of plasma potential in a 60 MHz/2MHz pulsed dual-frequency
PLASMA SOURCES SCIENCE & TECHNOLOGY, 21, 5, pp55006-550014
Anurag Mishra, Min Hwan Jeon, Kyong Nam Kim and Geun Young Yeom

9. Thermal stability of AgXCu1−X alloys and Pt capping layers for GaN vertical light emitting diodes
Thin Solid Films, 521, , pp54-59
S.H. Kim, T.H. Kim, J.W. Bae, G.Y. Yeom

10. Mass spectrometric study of discharges produced by a large-area dual-frequency–dual-antenna inductiv
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 45, 47, pp475201-475209
Anurag Mishra, Tae Hyung Kim, Kyong Nam Kim and Geun Young Yeom

11. Study on the oxidation and reduction of tungsten surface for sub-50nm patterning process
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 30, 6, pp061305-061313
Jong Kyu Kim, Seok Woo Nam, Sung Il Cho, Myung S. Jhon, Kyung Suk Min

12. Perfluoropolyether Lubricant Interactions With Novel Overcoat via Coarse-Grained Molecular Dynamics
IEEE TRANSACTIONS ON MAGNETICS, 48, 11, pp4277-4280
Sesha Hari Vemuri, PS Chung, R.Smith, Geun-Young Yeom, Y.I Jhon, Nae-Eung Lee, L T.Biegler, M.S Jhon

13. Temperature Profile in the Presence of Hotspots in Heat Assisted Magnetic Recording
IEEE TRANSACTIONS ON MAGNETICS, 48, 11, pp4265-4268
Hyung Min Kim, Sesha Hari Vemuri, P.S Chung, Y.I Jhon, Nae-Eung Lee, Geun-Young Yeom, Myung S. Jhon

14. Optoelectronic Characteristics of Organic Light-Emitting Diodes with a Rb2CO3-Mixed C60 Layer as an Electron Ohmic-Contact
Journal of The Electrochemical Society, 160 (1) G1-G5
Jong Tae Lim, JinWoo Park, Jae Wook Kwon, Geun Young Yeom, Kyuwook Lhm, and kyoung Jae Lee

15. Characteristics of the electromagnetic interference shielding effectiveness of Al-doped ZnO thin films deposited by atomic layer deposition
Applied Surface Science
Yong-June Choi, Su Cheol Gong, David C. Johnson, Stephen Golledge, Geun Young Yeom, Hyung-Ho Park

16. Improvement of metal gatehigh-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate
Solid-State Electronics
K.S. Min, C. Park, C.Y. Kang, C.S. Park, B.J. Park, Y.W. Kim, B.H. Lee, Jack C. Lee, G.Y. Yeom

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[2011]

1. Ion Bombardment during the Deposition of SiOX by AC-Biasing in a Remote-Type Atmospheric Pressure Plasma System
Journal of The Electrochemical Society, 158 3 G58-G62
Elly Gil, Jae Beom Park, Jong Sik Oh, Myung S. Jhon, and Geun Young Yeom

2. Chemical and Electronic Properties of BaBis(2-methyl-8-quinolinolato)(4-phenylphenolato)Aluminum(III) Interfaces for Organic Light-Emitting Diodes
Journal of Nanoscience and Nanotechnology Vol. 11, 851–855
Jong Tae Lim, Jae Wook Kwon, Jae Beom Park, and Geun Young Yeom

3. Removal of Anodic Aluminum Oxide Barrier Layer on Silicon Substrate by using Cl2/BCl3 Neutral Beam Etching
Journal of The Electrochemical Society, 158 (5) D254-D258
J.K.Yeon, W.S.Lim, J.B.Park, N.Y.Kwon, S.I.Kim, K.S.Min, I.S.Chung, Y.W.Kim, and G.Y.Yeom

4. Plasma Characteristics of Internal Inductively Coupled Plasma Source with Ferrite Module
Plasma Chem Plasma Process 31:507–515
Jong Hyeuk Lim, Kyong Nam Kim, Min Hwan Jeon, Jong Tae Lim, Geun Young Yeom

5. Effect of Halogen-Based Neutral Beam on the Etching of Ge2Sb2Te5
Journal of The Electrochemical Society, 158 (8) H768-H771
S.-K. Kang, M. H. Jeon, J. Y. Park, G. Y. Yeom, M. S. Jhon,c B. W. Koo and Y. W. Kim

6. Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography
Microelectronics and Nanometer Structures
Gwangmin Kwon and Kyeongkeun Ko,Haiwon Leea, Woongsun Lim and G.Y. Yeom, Sunwoo Lee and Jinho Ahn

7. Characteristics of hydrogenated silicon thin film deposited by RF-PECVD using HeeSiH4 mixture
Vacuum 86 82e86
In kyo Kim, Jong Hyeuk Lim, Geun Young Yeom

8. Etch Damage of Ge2Sb2Te5 for Different Halogen Gases
Japanese Journal of Applied Physics 50 086501
Se-Koo Kang, Min-Hwan Jeon, Jong-Yoon Park, Myung S. Jhon, and Geun-Young Yeom

9. Electrical characteristics of buried-Pt Schottky contacts on thin InP/InAlAs heterostructures
American Vacuum Society 041209-1
S.H Shin,J.I Song and J.H Jang, Tae-Woo Kim, Sang-Duk Park, Jeong-Woon Bae, and Geun-Young Yeom

10. Characteristics of SiO2 Etching with a C4F8/Ar/CHF3/O2 Gas Mixture in 60-MHz/2-MHz Dual-frequency Capacitively Coupled Plasmas
Journal of the Korean Physical Society Vol. 59, No. 5, pp. 30243030
M. H. Jeon, S-K. Kang, J. Y. Park and G. Y. Yeom

11. Linear inductive antenna design for large area flat panel display plasma processing
Microelectronic Engineering 89 133–137
K.N. Kim, J.H. Lim, H.B. Jeong, G.Y. Yeom, S.H. Lee, J.K. Lee

12. Fluorination of Aluminum Oxide Gate Dielectrics Using Fluorine Neutral/Ion Beams
Journal of Nanoscience and Nanotechnology Vol. 11, 5904–5908
Byoung Jae Park, Woong Sun Lim, J.K Yeon, Y.Y Kim, S.K Kang, J.T Lim and Geun Young

13. Layer by Layer Etching of the Highly Oriented Pyrolythic Graphite by Using Atomic Layer Etching
Journal of The Electrochemical Society, 158 (12) D710-D714
Y. Y. Kim, W. S. Lim, J. B. Park, and G. Y. Yeom

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[2010]

1. Investigation of the plasma uniformity in an internal linear antenna-type inductively coupled plasma source by applying dual frequency
Vacuum 84 823–827
Gwang Ho Gweon, Jong Hyeuk Lim, Kyong Nam Kim, Seung Pyo Hong, Tae Hong Min, Geun Young Yeom

2. Characteristics of internal inductively coupled plasma with a ferrite module
JOURNAL OF PHYSICS D: APPLIED PHYSICS 43 095202 (5pp)
Jong Hyeuk Lim, Kyong Nam Kim, Gwang Ho Gwon, Seng Pyo Hong, Seok Hwan Kim and Geun Young Yeom

3. Characteristics of Internal Inductively Coupled Plasma Source for Ultralarge-Area Plasma Processing
Japanese Journal of Applied Physics 49 030213
Jong Hyeuk Lim, Gwang Ho Gweon, Seung Pyo Hong, Kyong Nam Kim, Yi Yeon Kim, and Geun Young Yeom

4. Plasma Characteristics of a Ni–Zn Ferrite Enhanced Internal-Type Inductively Coupled Plasma Source Operated at 2 and 13.56 MHz
Plasma Chem Plasma Process 30:183–190
Kyong Nam Kim, Jong Hyeuk Lim, Geun Young Yeom

5. Ferrite-Enhanced U-Shaped Internal Antenna for Large-Area Inductively Coupled Plasma System
IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 38, NO. 2
Kyong Nam Kim, Jong Hyeuk Lim, Woong Sun Lim, and Geun Young Yeom

6. Effect of DC Bias Voltage on the Characteristics of Low Temperature Silicon–Nitride Films Deposited by Internal Linear Antenna Inductively Coupled Plasma Source
Japanese Journal of Applied Physics 49 056505
Gwang Ho Gweon, Jong Hyeuk Lim, Seung Pyo Hong, and Geun Young Yeom

7. Fabrication of nano-crystalline silicon thin film at low temperature by using a neutral beam deposition method
Journal ofCrystalGrowth312 2145–2149
SeKoo Kang, MinHwanJeon, JongYoonPark, HyoungCheolLee, ByungJaePark, JeKwan Yeon, GeunYoungYeom

8. Effect of Capacitor Installed in Series With a Ferrite-Enhanced Internal Linear-Type Antenna on the Properties of an Inductively Coupled Plasma
IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL.38, NO.6 pp1499
Gwang Ho Gweon, Jong Hyeuk Lim, Seung Pyo Hong, and Geun Young Yeom

9. Number of graphene layers as a modulator of the open-circuit voltage of graphene-based solar cell
APPLIED PHYSICS LETTERS 97, 032113
K.W Ihm, J.T Lim, K.J. Lee, J.W Kwon, T.H Kang, S.M Chung, S.K Bae, J.H Kim, B.H. Hong, G.Y Yeom

10. Plasma Characteristics of 450mm Diameter Ferrite-Enhanced Inductively Coupled Plasma Source
Japanese Journal of Applied Physics 49 080217
Seung Pyo Hong, Jong Hyeuk Lim, Gwang Ho Gweon, and Geun Young Yeom

11. Light-emitting characteristics of organic light-emitting diodes with the MoOx-doped NPB and C60LiF layer
Thin Solid Films 518 6339–6342
Jae Wook Kwon, Jong Tae Lim, Geun Young Yeom

12. Characteristics of SiOx thin films deposited by atmospheric pressure chemical vapor deposition as a function of HMDSO2 flow rate
Thin Solid Films 518 6403–6407
Elly Gil, J.B. Park, J.S. Oh, G.Y. Yeom

13. Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam
Plasma Chem Plasma Process 30:633–640
B.J.Park, J.K.Yeon, W.S.Lim, S.K.Kang, J.W.Bae, G.Y.Yeom, M.S.Jhon, S.H.Shin, K.S.Chang, J.I.Song

14. High-speed etching of SiO2 using a remote-type pin-to-plate dielectric barrier discharge at atmospheric pressure
JOURNAL OF PHYSICS D: APPLIED PHYSICS 43 425207 (6pp)
Jong Sik Oh, Jae Beom Park, Elly Gil and Geun Young Yeom

15. Polyimide Surface Treatment by Atmospheric Pressure Plasma for Metal Adhesion
Journal of The Electrochemical Society, 157 12 D614-D619
J. B. Park, J. S. Oh, E. L. Gil, S. J. Kyoung, J. T. Lim, and G. Y. Yeom

16. Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment
Japanese Journal of Applied Physics 49 04DF20
Kariyadan Remashan, Y.S Choi, S.K Kang, J.W Bae, G.Y Yeom, S.J Park, and J.H Jang

17. Etching of CoFeB Using CO/NH3 in an Inductively Coupled Plasma Etching System
Journal of The Electrochemical Society, H1-H4 2011
Jong-Yoon Park, Se-Koo Kang, Min-Hwan Jeon, Myung S. Jhon and Geun-Young Yeom

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[2009]

1. Line-type inductively coupled plasma source with ferromagnetic module
Journal of Physics D: Applied Physics 42 (1) , art. no. 015204
Lim, J.H., Kim, K.N., Gweon, G.H., Yeom, G.Y.

2. Atomic layer etching of ultra-thin HfO2 film for gate oxide in MOSFET devices
Journal of Physics D: Applied Physics 42 (5) , art. no. 055202
Park, J.B., Lim, W.S., Park, B.J., Park, I.H., Kim, Y.W., Yeom, G.Y.

3. Electronic structures of Ba-on- Alq3 interfaces and device characteristics of organic light-emitting diodes based on these interfaces
Journal of Applied Physics 105 (8) , art. no. 083705
Lim, J.T., Yeom, G.Y., Lhm, K., Kang, T.-H.

4. Residual stress on nanocrystalline silicon thin films deposited under energetic ion bombardment
Thin Solid Films 517 (14) , pp. 4100-4103
Lee, H.C., Hong, S.P., Kang, S.K., Yeom, G.Y.

5. Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar
Thin Solid Films 517 (14) , pp. 4065-4069
Kim, Y.S., Lee, J.H., Lim, J.T., Park, J.B., Yeom, G.Y.

6. High-energy negative ion beam obtained from pulsed inductively coupled plasma for charge-free etchin
Applied Physics Letters 94 (23) , art. no. 231502
Vozniy, O.V., Yeom, G.Y.

7. Neutralization efficiency estimation in a neutral beam source based on inductively coupled plasma
Journal of Applied Physics 105 (1) , art. no. 013308
Vozniy, O.V., Yeom, G.Y.

8. Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications
Applied Physics Letters 95 (2) , art. no. 022905
Park, C., Park, S.D., Gilmer, D.C., Park, H.K., Kang, C.Y., Lim, K.Y., Burham, C., Yeom, G.Y.

9. Study of Internal Linear Inductively Coupled Plasma Source for Ultra Large-Scale Flat Panel Display Processing
Plasma Chemistry and Plasma Processing 29 (4) , pp. 251-259
Lim, J.H., Kim, K.N., Gweon, G.H., Park, J.B., Yeom, G.Y.

10. Improvement of surface roughness in silicon-on-insulator wafer fabrication using a neutral beam etching
Journal of Physics D: Applied Physics 42 (15) , art. no. 155204
Min, T.H., Park, B.J., Kang, S.K., Gweon, G.H., Kim, Y.Y., Yeom, G.Y.

11. Plasma texturing of multicrystalline silicon for solar cell using remote-type pin-to-plate dielectric barrier discharge
Journal of Physics D: Applied Physics 42 (21) , art. no. 215201
Yeom, G.Y., Park, J.B., Oh, J.S., Gil, E., Kyoung, S.-J., Kim, J.-S.

12. Characteristics of SiOx Thin Films Deposited by Using Direct-Type Pin-to-Plate Dielectric Barrier Discharge with PDMS/He/O2 Gases at Low Temperature
Journal of the Korean Physical Society 54 (3) , pp. 981-985
Lee, J.H., Kim, Y.S., Kyung, S.J., Lim, J.T., Yeom, G.Y.

13. Etch Characteristics of TiO2 Etched by Using an Atomic Layer Etching technique with BCl3 Gas and an Ar Neutral Beam
Journal of the Korean Physical Society 54 (3) , pp. 976-980
Park, J.B., Lim, W.S., Park, S.D., Park, B.J., Yeom, G.Y.

14. Characteristics of SiOx Thin Film Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Using PDMS/O2/He
Journal of the Electrochemical Society 156 (7) , pp. D248-D252
Lee, J.H., Kim, Y.S., Oh, J.S., Kyung, S.J., Lim, J.T., Yeom, G.Y.

15. Effect of antenna diameter on the characteristics of internal-type linear inductively coupled plasma
Japanese Journal of Applied Physics 48 (9 Part 1) , pp. 0960021-0960024
Lim, J.H., Kim, K.N., Gweon, G.H., Hong, S.P., Yeom, G.Y.

16. Low Damage Atomic Layer Etching of ZrO2 by Using BCl3 Gas and Ar Neutral Beam
Journal of Nanoscience and Nanotechnology 9 (12) , pp. 7379-7382
Lim, W.S., Park, J.B., Park, J.Y., Park, B.J., Yeom, G.Y.

17. Device Characteristics of Organic Light-Emitting Diodes Based on Electronic Structure of the Ba-Doped Alq3 Layer
Journal of Nanoscience and Nanotechnology 9 (12) , pp. 7485-7490
Lirm, J.T., Kim, K.N., Yeom, G.Y.

18. Effect of Multi-Polar Magnetic Field on the Properties of Nanocrystalline Silicon Thin Film Deposited by Internal-Type Inductively Coupled Plasma
Journal of Nanoscience and Nanotechnology 9 (12) , pp. 7440-7445
Kim, H.B., Lee, H.C., Kim, K.N., Kang, S.K., Yeom, G.Y.

19. A Novel Damage-Free High-k Etch Technique Using Neutral Beam-Assisted Atomic Layer Etching (NBALE) for Sub-32nm Technology Node Low Power Metal Gate/High-k Dielectric CMOSFETs
Technical Digest - International Electron Devices Meeting, IEDM , art. no. 5424330 , pp. 17.4.1-17.4Min, K.S., Kang, C.Y., Park, C., Park, C.S., Park, B.J., Park, J.B., Hussain, M.M., Yeom, G.Y

20. Atomic Layer Etching of III-V Compound Materials Using a Low Angle Forward Reflected Ne Neutral Beam
9th IEEE Conference on Nanotechnology, IEEE NANO 2009 , art. no. 5394649 , pp. 345-347
Lim, W.S., Yeom, G.Y., Park, S.D., Kim, Y.Y., Park, B.J.

21. Light-Emitting Characteristics of Organic Light-Emitting Diodes with Ba/Al Cathode and Effect of Ba Thickness by Measuring their Built-in Potential
Japanese Journal of Applied Physics 48 (12) , art. no. 122102
Lim, J.T., Yeom, G.Y.

22. Plasma Characteristics of Large Area Inductively Coupled Plasma System Using Ferrite-Module-Enhanced U-Type Antenna
Japanese Journal of Applied Physics 48 (11) , art. no. 116006
Kim, K.N., Lim, J.H., Yeom, G.Y.

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[2008]

1. Low angle forward reflected neutral beam source and its applications
JOURNAL OF PHYSICS D: APPLIED PHYSICS 41 (2008) 024005 (13pp)
BJ Park, SW Kim, SK Kang, KS Min, SD Park, SJ Kyung, HC Lee, JW Bae, JT Lim, DH Lee and GY Yeom

2. Light-Emitting Characteristics of Top-Emitting Organic Light-Emitting Diodes Based on the Interfacial Electronic Feature of Cs-on-Alq3
Journal of the Korean Physical Society, Vol. 52, No. 2, February 2008, pp. 476480
Jong Tae Lim, June Hee Lee, Yang Su Kim and G. Y. Yeom

3. Characteristics of a Ferromagnetic-Enhanced Inductively-Coupled Plasma by an Internal Linear Antenna
Journal of the Korean Physical Society, Vol. 52, No. 2, February 2008, pp. 313317
Jong Hyeuk Lim, Kyong Nam Kim, Jung Kyun Park and Geun Young Yeom

4. Comparison of the Electrical Characteristics of Serpentine-Type and Double-Comb-Type Antennas for Large-Area Plasma Generation
Journal of the Korean Physical Society, Vol. 52, No. 2, February 2008, pp. 308312
Jung Kyun Park, Kyong Nam Kim, Jong Hyeuk Lim and Geun Young Yeom

5. Plasma Characteristics and Antenna Electrical Characteristics of an Internal Linear Inductively Coupled Plasma Source with a Multi-Polar Magnetic Field
Plasma Chem Plasma Process (2008) 28:147–158
Kyong Nam Kim, Jong Hyeuk Lim, Jung Kyun Park, Geun Young Yeom, Sung Hee Lee, Jae Koo Lee

6. White top-emitting organic light-emitting diodes using one-emissive layer of the DCJTB doped DPVBi layer
Thin Solid Films 516 (2008) 3590–3594
M.S. Kim , C.H. Jeong , J.T. Lim , G.Y. Yeom

7. Uniformity of internal linear-type inductively coupled plasma source for flat panel display processing
APPLIED PHYSICS LETTERS 92, 051504 2008
Jong Hyeuk Lim, Kyong Nam Kim, Jung Kyun Park,Jong Tae Lim, and Geun Young Yeom

8. Effect of N2O Plasma Treatment on the Performance of ZnO TFTs
Electrochemical and Solid-State Letters, 11 (3) H55-H59
K. Remashan, D. K. Hwang, S. D. Park, J. W. Bae, G. Y. Yeom, S. J. Park and J. H. Jang

9. Characteristics of SiO2-Like Thin Film Deposited by Atmospheric-Pressure PECVD Using HMDS/O2/Ar
Journal of The Electrochemical Society, 155 (3) D163-D166
J. H. Lee, Thuy. T. T. Pham, Y. S. Kim, J. T. Lim, S. J. Kyung, and G. Y. Yeom

10. Precise Depth Control and Low-Damage Atomic-Layer Etching of HfO2 using BCl3 and Ar Neutral Beam
Electrochemical and Solid-State Letters, 11 (4) H71-H73
S. D. Park, W. S. Lim, B. J. Park, H. C. Lee, J. W. Bae, and G. Y. Yeom

11. Neutralized fluorine radical detection using single-walled carbon nanotube network
CARBON 46 (2008) 24 –29
Sehun Jung, Seunghyun Hong, Byoungjae Park, Jaeboong Choi, Youngjin Kim, Geunyoung Yeom, Seunghyu

12. Effect of capacitive to inductive coupling transition in multiple linear U-type antenna on silicon thin film deposition from pure SiH4 discharges
American Vacuum Society J. Vac. Sci. Technol. A 26(4)
Hong Bum Kim, Hyoung Cheol Lee, Kyong Nam Kim, and Geun Young Yeom

13. Top-emitting organic light-emitting diodes with Ba/Ag/indium tin oxide cathode and built-in potential analyses in these devices
American Vacuum Society J. Vac. Sci. Technol. A 26(4) Jul/Aug 2008
J. T. Lim, J. H. Lee, and G. Y. Yeom, E. H. Lee and T. W. Kim

14. Improvement of electron field emission from carbon nanotubes by Ar neutral beam treatment
CARBON 46 (2008) 1316–1321
Se-Jin Kyunga, Jae-Beom Park, Byung-Jae Park, June-Hee Lee, Geun-Young Yeom

15. Plasma-Enhanced Chemical Vapor Deposition of SiO2 Thin Films at Atmospheric Pressure by Using HMDS/Ar/O2
Journal of the Korean Physical Society, Vol. 53, No. 2, August 2008, pp.892~896
Y. S. Kim, J. H. Lee, Thuy. T. T. Pham and J. T. Lim ,G. Y. Yeom

16. Laser Annealing on Ti Electrode: Impact on Ti/HfO2/SiO2 n-Type MOSFET
Electrochemical and Solid-State Letters, 11 (10) H276-H279 (2008)
Sungho Heo, R. Dong, Musarrat Hasan, Hyunsang Hwang, S. D. Park,and G. Y. Yeom

17. Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes
Solid-State Electronics 52 (2008) 1193–1196
H.C. Lee , J.B. Park , J.W. Bae , Pham Thi Thu Thuy , M.C. Yoo , G.Y. Yeom

18. A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance In0.52Al0.48As/In0.53Ga0.47As p-HEMTs
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 7, JULY 2008
T.W Kim, D.H Kim, S.D Park, S.H Shin, S.J Jo, H.J Song, Young Min Park, J.O Bae, Y.W Kim, G.Y Yeom

19. X-ray photoelectron spectroscopic study of Ge2Sb2Te5 etched by fluorocarbon inductively coupled plasmas
APPLIED PHYSICS LETTERS 93, 043126 2008
S.-K. Kang, J. S. Oh, B. J. Park, S. W. Kim, J. T. Lim, G. Y. Yeom, C. J. Kang, and G. J. Min

20. Scalable internal linear double comb-type inductively coupled plasma source for large area flat panel display processing
Surface &Coatings Technology 202 (2008) 5242–5245
Kyong Nam Kim, Jong Hyeuk Lim, Jung Kyun Park, Geun Young Yeom

21. Properties of SixNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using SiH4/NH3/Ar as diffusion barrier film
Surface &Coatings Technology 202 (2008) 5617–5620
Thuy T.T. Pham, J.H. Lee, Y.S. Kim, G.Y. Yeom

22. Atomic layer etching of (100)/(111) GaAs with chlorine and low angle forward reflected Ne neutral beam
Surface &Coatings Technology 202 (2008) 5701–5704
Woong Sun Lim , Sang Duk Park , Byoung Jae Park , Geun Young Yeom

23. Top-emitting organic light-emitting diodes based on semitransparent conducting cathode of Ba/Al/ITO
Surface &Coatings Technology 202 (2008) 5646–5649
J.T. Lim, J.H. Lee, J.K. Park, B.J. Park, G.Y. Yeom

24. Characteristics of Plasma Using a Ferromagnetic Enhanced Inductively Coupled Plasma Source
Japanese Journal of Applied Physics Vol. 47, No. 9, 2008, pp. 7339–7342
Kyong Nam KIM, Jong Hyeuk LIM, Jung Kyun PARK, Jong Tae LIM, and Geun Young YEOM

25. Effect of antenna capacitance on the plasma characteristics of an internal linear inductively coupled plasma system
PHYSICS OF PLASMAS 15, 083501 (2008)
Jong Hyeuk Lim, Kyong Nam Kim, Jung Kyun Park, and Geun Young Yeom

26. Effect of initial crystallized silicon layer on the properties of microcrystalline silicon grown by internal inductively coupled plasma-type plasma enhanced chemical vapor deposition
Surface &Coatings Technology 203 (2008) 799–803
H.C. Lee , H.B. Kim , G.Y. Yeom , I.H. Park , Y.W. Kim

27. Selective Etching of HfO2 by Using Inductively-Coupled Ar/C4F8 Plasmas and the Removal of Etch Residue
Journal of the Korean Physical Society, Vol. 53, No. 3, September 2008, pp. 16751679
K. S. Min, B. J. Park, S. W. Kim and S. K. Kang, G. Y. Yeom, S. H. Heo and H. S. Hwang, C. Y. Kang

28. Plasma etching of SiO2 using remote-type pin-to-plate dielectric barrier discharge
JOURNAL OF APPLIED PHYSICS 104, 083302 2008
Jae Beom Park, Se Jin Kyung, and Geun Young Yeom

29. Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam
APPLIED PHYSICS LETTERS 93, 191506 2008
Sung Woo Kim, Byoung Jae Park, Se Koo Kang, Bo Hyun Kong, Hyung Koun Cho, Geun Young Yeom, Sungho H

30. Device Performance of the Top-Emitting Organic Light-Emitting Diodes Using the Ba/Au/Indium Tin Oxide Cathode System with Long Skin Depth
Japanese Journal of Applied Physics Vol. 47, No. 10, 2008, pp. 8039–8042
Jong Tae LIM, Chang Hyun JEONG, and Geun Young YEOM

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[2007]

1. Doped-Fluorine on Electrical and Optical Properties of Tin Oxide Films Grown by Ozone-Assisted Thermal CVD
Journal of the Electrochemical Society 154 (1) , pp. D34-D37
Bae, J.W., Lee, S.W., Yeom, G.Y.

2. Surface analysis of atomic-layer-etched silicon by chlorine
Electrochemical and Solid-State Letters 10 (3) , pp. H94-H97
C. K. Oh, S. D. Park, H. C. Lee, J. W. Bae, and G. Y. Yeom

3. High efficiency white organic light-emitting diodes from one emissive layer
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (2)
Jeong, C.H., Lim, J.T., Kim, M.S., Lee, J.H., Bae, J.W., Yeom, G.Y.

4. Growth of carbon nanotubes by atmospheric pressure plasma enhanced chemical vapor deposition using NiCr catalyst
Surface and Coatings Technology 201 (9-11 SPEC. ISS.) , pp. 5378-5382
Kyung, S.-J., Voronko, M., Lee, Y.-H., Kim, C.-W., Lee, J.-H., Yeom, G.-Y.

5. Top-emitting organic light-emitting diode using transparent conducting
Surface and Coatings Technology 201 (9-11 SPEC. ISS.) , pp. 5358-5362
Lim, J.T., Jeong, C.H., Vozny, A., Lee, J.H., Kim, M.S., Yeom, G.Y.

6. Effects of inductively coupled plasma treatment using O2, CF4, and CH4 on the characteristics of organic light emitting diodes
Surface and Coatings Technology 201 (9-11 SPEC. ISS.) , pp. 5012-5016
Jeong, C.H., Lee, J.H., Lim, J.T., Kim, M.S., Yeom, G.Y.

7. SiOxNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using HMDS–O2–NH3–Ar gas mixtures
Surface and Coatings Technology 201 (9-11 SPEC. ISS.) , pp. 4957-4960
Lee, J.H., Jeong, C.H., Lim, J.T., Zavaleyev, V.A., Kyung, S.J., Yeom, G.Y.

8. The effect of atmospheric pressure plasma treatment on the field emission characteristics of screen printed carbon nanotubes
Carbon 45 (3) , pp. 649-654
Kyung, S.-J., Park, J.-B., Voronko, M., Lee, J.-H., Yeom, G.-Y.

9. Anisotropic Etching of InP and InGaAs by Using an Inductively Coupled Plasma in Cl2/N2 and Cl2/Ar Mixtures at Low Bias Power
Journal of the Korean Physical Society 50 (4) , pp. 1130-1135
Bae, J.W., Jeong, C.H., Lim, J.T., Lee, H.C., Yeom, G.Y., Adesida, I.

10. Effect of neutral beam etching of p-GaN on the GaN device characteristics
American Vacuum Society J. Vac. Sci. Technol. B 25(2)
Park, B.J., Min, K.S., Lee, H.C., Bae, J.W., Kim, D.W., Yeom, G.Y.

11. Effect of Fluorine Ion/Neutral-Beam Irradiation on Ohmic Contact Formation to n-Type GaN
Electrochemical and Solid-State Letters 10 (6) , pp. 161-164
Lee, H.C., Bae, J.W., Park, B.J., Jang, J.H., Yeom, G.Y.

12. Effect of additive gases on the selective etching of ZrOx film using inductively coupled BCl3-based plasmas
Thin Solid Films 515 (12) , pp. 5045-5048
Park, S.D., Lim, J.H., Yeom, G.Y.

13. Plasma and antenna characteristics of a linearly extended inductively coupled plasma system using multi-polar magnetic field
Thin Solid Films 515 (12) , pp. 5193-5196
Kim, K.N., Lim, J.H., Yeom, G.Y.

14. Energy shift during ion extraction from an ICP source
Journal of the Korean Physical Society 50 (5) , pp. 1271-1275
Vozniy, O.V., Park, B.J., Min, K.S., Yeom, G.Y.

15. The effect of Ar neutral beam treatment of screen-printed carbon nanotubes for enhanced field emission
Journal of Applied Physics 101 (8) , art. no. 083305
Kyung, S.J., Park, J.B., Park, B.J., Min, K.S., Lee, J.H., Yeom, G.Y., Shin, Y.S., Park, C.Y.

16. Synthesis, Structural Characterization and Photoluminescence Properties of SiOx Nanowires Prepared Using a Palladium Catalyst
Journal of the Korean Physical Society 50 (6) , pp. 1799-1802
Kim, H.W., Shim, S.H., Lee, J.W., Lee, C., Hwang, H.J., Chung, S.-Y., Kim, H.-S., (...), Yoon, E.

17. Two-dimensional fluid simulation of large-area plasma source with parallel resonance antenna
Computer Physics Communications 177 (1-2 SPEC. ISS.) , pp. 126
Choi, S., Lee, S., Lee, J., Kim, K., Yeom, G.

18. Top-emitting organic light-emitting diodes using Cs/Al/Ag cathodes
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (7)
Lim, J.T., Jeong, C.H., Kim, M.S., Lee, J.H., Bae, J.W., Yeom, G.Y.

19. High-Luminance Top-Emitting Organic Light-Emitting Diodes Using Cs/Al/Au as the Semitransparent Multimetal Cathode
Journal of the Electrochemical Society 154 (10) , pp. J302-J305
Lim, J.T., Jeong, C.H., Lee, J.H., Yeom, G.Y., Shin, E.-C., Lee, E.H., Kim, T.W.

20.  Thermally stable Ti/Al/W/Au multilayer ohmic contacts on n-type GaN
Journal of the Korean Physical Society 51 (3) , pp. 1046-1049
Lee, H.C., Bae, J.W., Yeom, G.Y.

21. Transparent Top-Emitting Organic Light-Emitting Diodes Using a Cs/Al/Ag/ITO Semi-Transparent Cathode
Journal of the Korean Physical Society 51 (3) , pp. 1147-1151
Lim, J.T., Jeong, C.H., Kim, M.S., Lee, J.H., Bae, J.W., Yeom, G.Y.

22. Blue Organic Light-Emitting Diodes Fabricated by Using an Enhanced Hole-Blocking Property
Journal of the Korean Physical Society 51 (3) , pp. 1019-1022
Lim, J.T., Jeong, C.H., Lee, J.H., Kim, M.S., Bae, J.W., Yeom, G.Y.

23. Study on the low-angle surface scattering of the low-energy ions
Journal of the Korean Physical Society 51 (3) , pp. 967-971
Min, K.S., Park, B.J., Park, J.B., Kang, S.K., Yeom, G.Y., Lee, D.H.

24. Study of selective amorphous silicon etching to silicon nitride using a pin-to-plate dielectric barrier discharge in atmospheric pressure
Applied Physics Letters 91 (9) , art. no. 091504
Kyung, S.-J., Park, J.-B., Lee, J.-H., Lim, J.-T., Yeom, G.-Y.

25. Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching
Applied Physics Letters 91 (10) , art. no. 102110
Kim, T.-W., Song, J.-I., Jang, J.H., Kim, D.-H., Park, S.D., Bae, J.W., Yeom, G.Y.

26. Atmospheric Pressure Remote Plasma Ashing of Photoresist Using Pin-To-Plate Dielectric Barrier Discharge
Japanese Journal of Applied Physics, Part 2: Letters 46 (36-40) , pp. L942-L944
Park, J., Kyung, S., Yeom, G.

27. Highly selective and low damage atomic layer etching of InP/InAlAs heterostructures for high electron mobility transistor fabrication
Applied Physics Letters 91 (1) , art. no. 013110
Park, S.D., Oh, C.K., Lim, W.S., Lee, H.C., Bae, J.W., Yeom, G.Y., Kim, T.W., (...), Jang, J.H.

28. Effect of a Two-Step Recess Process Using Atomic Layer Etching on the Performance of In0.52Al0.48As/In0.53Ga0.47As p-HEMTs
IEEE Electron Device Letters 28 (12) , pp. 1086-1088
Kim, T.-W., Kim, D.-H., Park, S.D., Yeom, G.Y., Lim, B.O., Rhee, J.-K., Jang, J.-H., Song, J.-I.

29. Effect of Ion Bombardment on the Chemical and the Mechanical Properties of Silicon-Nitride Thin Films Deposited by Using PECVD with SiH4/NH3/Ar Gases at Low Temperature
Journal of the Korean Physical Society 51 (6) , pp. 1934-1939
Pham, T.T.T., Lee, J.H., Kim, Y.S., Yeom, G.Y.

30. Four-wavelength white organic light-emitting diodes using 4,40-bis-[carbazoyl-(9)]-stilbene as a deep blue emissive layer
Organic Electronics: physics, materials, applications 8 (6) , pp. 683-689
Jeong, C.H., Lim, J.T., Kim, M.S., Lee, J.H., Bae, J.W., Yeom, G.Y.

31. Formation of High Flux Parallel Neutral Beam using a Three Grid System of Ion Beam during Low Angle Forward Reflection of Ions
Diffusion and Defect Data Pt.B: Solid State Phenomena 124-126 (PART 1) , pp. 275-278
Park, B.-J., Min, K.-S., Park, S.-D., Bae, J.-W., Vozniy, O., Yeom, G.-Y.

32. Inductively Coupled Plasma Source Using Internal Multiple U-Type Antenna for Ultra Large-Area Plasma Processing
Plasma Processes and Polymers 4 (SUPPL.1) , pp. S999-S1003
Jong Hyeuk Lim, Kyong Nam Kim, Geun Young Yeom

33. Characteristics of Inductive Coupled Plasma with Internal Linear Antenna Using Multi-Polar Magnetic Field for FPD Processing
Diffusion and Defect Data Pt.B: Solid State Phenomena 124-126 (PART 1) , pp. 271-274
Lim, J.H., Kim, K.N., Yeom, G.Y.

34. Characteristics of Inductively Coupled Plasma using Internal Double Comb-type Antenna for Flat Panel Display Processing
Japanese Journal of Applied Physics, Part 2: Letters 46 (45-49) , pp. L1216-L1218
Lim, J.H., Kim, K.N., Park, J.K., Park, J.H., Yeom, G.Y.

35. High-speed etching of amorphous silicon using pin-to-plate dielectric barrier discharge
Surface and Coatings Technology 202 (4-7) , pp. 1204-1207
Kyung, S.-J., Park, J.-B., Lee, Y.-H., Lee, J.-H., Yeom, G.-Y.

36. Loss current minimization during ion extraction from an inductively coupled plasma
JOURNAL OF APPLIED PHYSICS 102, 083306 (2007)
Oleksiy Vozniy, Kostyantyn Polozhiy, and Geun Young Yeom

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[2006]

1. Characteristics of SiOxNy Films Deposited by PECVD at Low-Temperature Using BTBAS-NH3-O2
Journal of the Korean Physical Society 48 (1) , pp. 89-92
June Hee Lee, Chang Hyun Jeong, Jong Tae Lim, V.A.Zavaleyev, Kyung Suk Min, Geun Young Yeom

2. Characteristics of a large-area plasma source using internal multiple U-type antenna
Journal of the Korean Physical Society 48 (2) , pp. 256-259
Kyong Nam Kim and Geun Young Yeom

3. Selective plasma etching of ZrOx to Si using inductively coupled BCl3/C4F8 plasmas
Applied Physics Letters 88 (9) , art. no. 094107
S. D. Park, J. H. Lim, C. K. Oh, H. C. Lee, and G. Y. Yeom

4. Plasma and Electrical Characteristics of a Novel Internal Linear Inductively Coupled Plasma Source for Flat Panel Display Applications
Journal of the Korean Physical Society 48 (3) , pp. 422-426
Kim, K.N., Yeom, G.Y.

5. White Organic Light-Emitting Diodes Using Bis(2,4-dimethyl-8-quinolinolato)(triphenylsilanolato) Aluminum(III) as a New Hole-Blocking Layer
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45.
Lim, J.T., Jeong, C.H., Lee, J.H., Lim, J.H., Yeom, G.Y.

6. Characteristic of carbon nanotubes synthesized by pin-to-plate type atmospheric pressure plasma enhanced chemical vapor deposition at low temperature
Carbon, 44 799–823
Yong-Hyuk Lee, Se-Jin Kyung, Chan-Woo Kim, Geun-Young Yeom

7. Study on the O2 plasma treatment of indium tin oxide for organic light emitting diodes
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45 (4)
Jeong, C.H., Lee, J.H., Lim, J.H., Lim, J.T., Yeom, G.Y.

8. Effective plasma confinement by applying multipolar magnetic fields in an internal linear
Applied Physics Letters 88 (16) , art. no. 161503
Kim, K.N., Kim, M.S., Yeom, G.Y.

9. Low impedance antenna arrangement of internal linear ICP source for large area FPD processing
Thin Solid Films 506-507 , pp. 460-463
Jung, S.J., Kim, K.N., Yeom, G.Y.

10. Deposition of carbon nanotubes by capillary-type atmospheric pressure PECVD Thin Solid Films 506-507 , pp. 268-273
Kyung, S., Lee, Y., Kim, C., Lee, J., Yeom, G.

11. Synthesis and characteristics of bis(2,4-dimethyl-8-quinolinolato) (triphenylsilanolato)aluminum
Journal of Organometallic Chemistry 691(12) , pp. 2701-2707
Lim, J.T., Jeong, C.H., Lee, J.H., Yeom, G.Y., Jeong, H.K., Chai, S.Y., Lee, I.M., Lee, W.I.

12. Nanostructures fabrication on Ta thin film using atomic force microscope lithography
Molecular Crystals and Liquid Crystals 445 , pp. 115/[405]-118/[408]
Lee, S., Lee, H., Lee, D.H., Park, B.J., Yeom, G.Y.

13. Field emission properties of carbon nanotubes synthesized by capillary type atmospheric pressure
Carbon 44 (8) , pp. 1530-1534
Kyung, S.J., Lee, Y.H., Kim, C.W., Lee, J.H., Yeom, G.Y.

14. Photoresist ashing technology using N2/O2 ferrite-core ICP in the dual damascene process
Journal of Materials Science 41 (15) , pp. 5040-5042
Kim, H.W., Myung, J.H., Lee, J.W., Kim, H.S., Kim, K., Jang, J.Y., Yoon, T.H., (...), Kim, H.-J.

15. Atomic layer etching of InP using a low angle forward reflected Ne neutral beam
Applied Physics Letters 89 (4) , art. no. 043109
Park, S.D., Oh, C.K., Bae, J.W., Yeom, G.Y., Kim, T.W., Song, J.I., Jang, J.H.

16. Investigation of the Magnetic Properties of an RF-Driven Inductively Coupled Argon Plasma
Journal of the Korean Physical Society 49 (4) , pp. 1460-1464
Vozniy, O., Voronko, M., Park, B.J., Yeom, G.Y.

17. Characteristics of a multilayer SiOx(CH)yN z film deposited by low temperature plasma enhanced
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45
Lee, J.H., Jeong, C.H., Lim, J.T., Zavaleyev, V.A., Kyung, S.J., Yeom, G.Y.

18. Effect of Indium-Oxide Deposited Using an Oxygen Ion-Beam-Assisted-Deposition to Top-Emitting Organic Light-Emitting Diodes
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45
Jeong, C.H., Lim, J.T., Lee, J.H., Kim, M.S., Bae, J.W., Yeom, G.Y.

19. Characteristics of Large Area Inductively Coupled Plasma Using a Multiple Linear Antennas with U-Type Parallel Connection for Flat Panel Display Processing Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45
Kyong Nam KIM, Kyung Seok MIN and Geun Young YEOM

20. White organic light-emitting diodes from three emitter layers
Thin Solid Films 515 (3) , pp. 891-895
Kim, M.S., Lim, J.T., Jeong, C.H., Lee, J.H., Yeom, G.Y.

21. Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier
Thin Solid Films 515 (3) , pp. 917-921
Lee, J.H., Jeong, C.H., Kim, H.B., Lim, J.T., Kyung, S.J., Yeom, G.Y.

22. CF4-based neutral-beam etch characteristics of Si and SiO 2 using a low-angle forward-reflected
Journal of the Korean Physical Society 49 (6) , pp. 2307-2310
Lee, D.H., Park, B.J., Min, K.S., Yeom, G.Y.

23. OLED deposition characteristics for 4th generation mass-production
Digest of Technical Papers - SID International Symposium 37 (1) , pp. 432-435
Kim, C.W., Kwon, H.G., Rho, J.S., Yoon, J.S., Bae, K.B., Jeong, C.H., Yeom, G.Y.

24. Improvement of field emission from screen-printed carbon nanotubes by He/(N2,Ar) atmospheric pressure plasma treatment
Journal of Applied Physics 100 (12) , art. no. 124303
Kyung, S.J., Park, J.B., Lee, J.H., Yeom, G.Y.

25. Effect of dual frequency on the plasma characteristics in an internal linear inductively coupled plasma source
Applied Physics Letters 89 (25) , art. no. 251501
Kim, K.N., Lim, J.H., Yeom, G.Y., Lee, S.H., Lee, J.K.

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[2005]

1. Precise depth control of silicon etching using chlorine atomic layer etching
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (1)
Sang-Duk PARK, Kyung-Suk MIN, Byoung-Young YOON, Do-Haing LEE and Geun-Young YEOM

2. Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure
Applied Physics Letters 86 (5) , art. no. 052108 , pp. 1-3
Kim, D.W., Lee, H.Y., Yoo, M.C., Yeom, G.Y.

3. Deposition of SiO2 by Plasma Enhanced Chemical Vapor Deposition as the Diffusion Barrier to Polymer Substrates
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (2)
Jeong, C.H., Lee, J.H., Lim, J.T., Cho, N.G., Moon, C.H., Yeom, G.Y.

4. Properties and Applications of a Modified Dielectric Barrier Discharge Generated at Atmospheric Pressure
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (2)
Yong-Hyuk LEE and Geun-Young YEOM

5. Characteristics of silicon carbide etching using magnetized inductively coupled plasma
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (3)
Lee, H.Y., Kim, D.W., Sung, Y.J., Yeom, G.Y.

6. Simulation of ion beam transport in an ion gun for materials processing
IEEE Transactions on Plasma Science 33 (2 I) , pp. 538-539
Kim, S.J., Wang, S.J., Lee, J.K., Yeom, G.Y.

7. Characteristic of SiO2 Films Deposited by Using Low-Temperature PECVD with TEOS/N2/O2
Journal of the Korean Physical Society 46 (4) , pp. 890-894
Lee, J.H., Jeong, C.H., Lim, J.T., Jo, N.G., Kyung, S.J., Yeom, G.Y.

8. Removal of Aspect-Ratio-Dependent Etching by Low-Angle Forward Reflected Neutral-Beam Etching
Journal of the Korean Physical Society 46 (4) , pp. 867-871
Lee, D.H., Park, B.J., Yeom, G.Y., Kim, S.J., Lee, J.K., Baek, K.H., Kang, C.J.

9. Characteristics of carbon nanotubes deposited by using low-temperature atmospheric-pressure plasma-e
Journal of the Korean Physical Society 46 (4) , pp. 918-921
Kim, C., Lee, Y., Kyung, S., Yeom, G.

10. Fabrication of Si nano-pillar array through Ni nano-dot mask using inductively coupled plasma
Thin Solid Films 475 (1-2 SPEC. ISS.) , pp. 41-44
Kim, M.J., Lee, J.S., Kim, S.K., Yeom, G.Y., Yoo, J.B., Park, C.Y.

11. Fabrication of SiC micro-lens by plasma etching
Thin Solid Films 475 (1-2 SPEC. ISS.) , pp. 318-322
Lee, H.Y., Kim, D.W., Sung, Y.J., Yeom, G.Y.

12. The Effect of N2 Flow Rate in HeO2N2 on the Characteristics of Large Area Pin-to-Plate Dielectric Barrier Discharge
Japanese Journal of Applied Physics, Part 2: Letters 44 (1-7) , pp. L78-L81
Lee, Y.H., Kyung, S.J., Jeong, C.H., Yeom, G.Y.

13. Effects of Axial Magnetic Field on Neutral Beam Etching by Low-Angle Forward-Reflected Neutral Beam Method
Japanese Journal of Applied Physics, Part 2: Letters 44 (1-7) , pp. L63-L66
Lee, D., Park, B., Yeom, G.

14. Characteristics of Organic Light-Emitting Devices by the Surface Treatment of Indium Tin Oxide Surfaces Using Atmospheric Pressure Plasmas
Japanese Journal of Applied Physics, Part 2: Letters 44 (1-7) , pp. L41-L44
Jeong, C.H., Lee, J.H., Lee, Y.H., Cho, N.G., Lim, J.T., Moon, C.H., Yeom, G.Y.

15. Effect of GaN microlens array on efficiency of GaN-based blue-light-emitting diodes
Japanese Journal of Applied Physics, Part 2: Letters 44 (1-7) , pp. L18-L20
Kim, D., Lee, H., Cho, N., Sung, Y., Yeom, G.

16. Low-impedance internal linear inductive antenna for large-area flat panel display plasma processing
Journal of Applied Physics 97 (6) , art. no. 063302
Kim, K.N., Jung, S.J., Lee, Y.J., Yeom, G.Y., Lee, S.H., Lee, J.K.

17. Characteristics of a pin-to-plate dielectric barrier discharge in helium
Journal of the Korean Physical Society 47 (1) , pp. 74-78
Lee, Y.H., Yeom, G.Y.

18. Indium-Oxide Thin Films Deposited by Using an Oxygen-Ion-Beam-Assisted Deposition Technique for Top-Emitting Organic Light-Emitting Diodes
Journal of the Korean Physical Society 47 (1) , pp. 142-147
Lim, J.T., Cho, N.G., Jeong, C.H., Lee, J.H., Lim, J.H., Yeom, G.Y.

19. Structural and Electrical Analysis of Silicon Thin Films Deposited by Transformer-Coupled-Plasma Chemical-Vapor Deposition
Journal of the Korean Physical Society 47 (2) , pp. 277-282
Lee, H.C., Yeom, G.Y., Lee, Y.J., Shin, J.K., Baik, S.I., Kim, Y.W.

20. Atomic Layer Etching of Cl-Adsorbed Silicon by Using a Low-Angle Forward Reflected Ar Neutral Beam
Journal of the Korean Physical Society 47 (3) , pp. 469-473
Park, S.D., Lee, D.H., Yeom, G.Y.

21. Effect of Pretreatment on the Deposition of Carbon Nanotubes by Using Atmospheric-Pressure Plasma-Enhanced Chemical-Vapor Deposition
Journal of the Korean Physical Society 47 (3) , pp. 463-468
Kyung, S.J., Lee, Y.H., Kim, C.W., Lee, J.H., Yeom, G.Y.

22. A study of transparent contact to vertical GaN-based light-emitting diodes Journal of Applied Physics 98 (5) , art. no. 053102
Kim, D.W., Lee, H.Y., Yeom, G.Y., Sung, Y.J.

23. Atomic layer etching of Si(100) and Si(111) using Cl2 and Ar neutral beam
Electrochemical and Solid-State Letters 8 (8) , pp. C106-C109
Park, S.D., Lee, D.H., Yeom, G.Y.

24. Characteristics of inductively coupled plasma with multiple U-type internal antenna for flat panel display applications
Surface and Coatings Technology 200 (1-4 SPEC. ISS.) , pp. 784-787
Kim, K.N., Jung, S.J., Yeom, G.Y.

25. Etching characteristics of multiple U-type internal linear inductively coupled plasma for flat panel display
Surface and Coatings Technology 200 (1-4 SPEC. ISS.) , pp. 780-783
Jung, S.J., Kim, K.N., Yeom, G.Y.

26. Properties of SiOxNy thin film deposited by low temperature plasma enhanced chemical vapor deposition using TEOS–NH3–O2–N2 gas mixtures
Surface and Coatings Technology 200 (1-4 SPEC. ISS.) , pp. 680-685
Lee, J.H., Jeong, C.H., Lim, J.T., Jo, N.G., Kyung, S.J., Yeom, G.Y.

27. Growth and Field-Emission Properties of Multiwalled Carbon Nanotubes Synthesized by a Pin-to-Plate-Type Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition
Journal of the Korean Physical Society 47 (5) , pp. 818-821
Kyung, S.J., Voronko, M., Lee, J.H., Yeom, G.Y.

28. Effects of Tin Concentration and Post-Annealing on the Electrical and the Optical Properties of In2−xSnxO3 (x = 0 ~ 0.25) Deposited at Room Temperature
Journal of the Korean Physical Society 47 (5) , pp. 889-894
Bae, J.W., Lee, H.C., Yeom, G.Y.

29. Novel Internal Linear Inductively Coupled Plasma Source for Flat Panel Display Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (11)
Kim, K.N., Jung, S.J., Yeom, G.Y.

30. Surface Roughness Variation during Si Atomic Layer Etching by Chlorine Adsorption Followed by an Ar Neutral Beam Irradiation
Electrochemical and Solid-State Letters 8 (11) , pp. C177-C179
Park, S.D., Oh, C.K., Lee, D.H., Yeom, G.Y.

31. Plasma and impedance characteristics of internal linear antennas for flat panel display applications
Thin Solid Films 491 (1-2) , pp. 82-85
Kim, K.N., Jung, S.J., Yeom, G.Y.

32. A Study of Electrical Damage to a-SiH Thin Film Transistor during Plasma Ashing by a Pin-to-Plate Type Atmospheric Pressure Plasma
Japanese Journal of Applied Physics, Part 2: Letters 44 (46-49) , pp. L1456-L1459
Lee, Y.H., Kyung, S.J., Lim, J.H., Yeom, G.Y.

33. Selective growth of nanometre scale structures with high resolution using thermal energy in AFM lithography
Nanotechnology 16 (12) , pp. 3137-3141
Lee, S., Lee, H., Park, B.J., Yeom, G.Y.

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[2004]

1. Characteristics of neutral beamgenerated by reflection on a planar-type reflector and its etching properties
Surface and Coatings Technology 177-178 , pp. 420-425
Lee, D.H., Jung, S.J., Park, S.D., Yeom, G.Y.

2.Effect of plasma cleanings on the characteristics of MgO layer for plasma display panel
Surface and Coatings Technology 177-178 , pp. 705-710
Hwang, H.K., Jeong, C.H., Lee, Y.J., Ko, Y.W., Yeom, G.Y.

3. Effects of multipolar magnetic fields on the characteristics of plasma and photoresist etching in an internal linear inductively coupled plasma system
Surface and Coatings Technology 177-178 , pp. 752-757
Kim, K.N., Lee, Y.J., Kyong, S.J., Yeom, G.Y.

4.  Effect of additive gases on the selective etching of tungsten films using inductively coupled halogen-based plasmas
Thin Solid Films 447-448 , pp. 586-591
Park, S.D., Lee, Y.J., Cho, N.G., Kim, S.G., Choe, H.H., Hong, M.P., Yeom, G.Y.

5. Oxide surface cleaning by an atmospheric pressure plasma
Surface and Coatings Technology 177-178 , pp. 711-715
Yi, C.H., Jeong, C.H., Lee, Y.H., Ko, Y.W., Yeom, G.Y.

6. High rate etching of 6H-SiC in SF6-based magnetically-enhanced inductively coupled plasmas
Thin Solid Films 447-448 , pp. 100-104
Kim, D.W., Lee, H.Y., Park, B.J., Kim, H.S., Sung, Y.J., Chae, S.H., Ko, Y.W., Yeom, G.Y.

7. Global warming gas emission during plasma cleaning process of silicon nitride using c-C4F8O/O2 chemistry with additive Ar and N2
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 22 (2).
Kim, K.J., Oh, C.H., Lee, N.-E., Kim, J.H., Bee, J.W., Yeom, G.Y., Yoon, S.S.

8. Magnetically enhanced inductively coupled plasma etching of 6H-SiC
IEEE Transactions on Plasma Science 32 (3 II) , pp. 1362-1366
Kim, D.W., Lee, H.Y., Kyoung, S.J., Kim, H.S., Sung, Y.J., Chae, S.H., Yeom, G.Y.

9. Characteristics of Parallel Internal-Type Inductively Coupled Plasmas for Large Area Flat Panel Display Processing
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43.
Kim, K.N., Lee, Y.J., Jung, S.J., Yeom, G.Y.

10. Generation of low-energy neutral beam for Si etching
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (5) , pp. 1948-1955
Kim, S.J., Wang, S.J., Lee, J.K., Lee, D.H., Yeom, G.Y.

11. Reduction of the electrostatic coupling in a large-area internal inductively coupled plasma source using a multicusp magnetic field
Applied Physics Letters 85 (10) , pp. 1677-1679
Lee, Y.J., Kim, K.N., Yeom, G.Y., Lieberman, M.A.

12. Requirements of Neutral Beam Source Regarding Gas Pressure and Neutral Angle for Nanoscale Etching
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43.
Kim, S.J., Lee, H.J., Yeom, G.Y., Koo, J.L.

13. Etching of Copper Films for Thin Film Transistor Liquid Crystal Display using Inductively Coupled Chlorine-Based Plasmas
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43.
Jang, K.H., Lee, W.J., Kim, H.R., Yeom, G.Y.

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[2003]

1. Characteristics of Ag etching using inductively coupled Cl2-based plasmas
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 42 (1)
Lee, Y.J., Park, S.D., Song, B.K., Kim, S.G., Choe, H.H., Hong, M.P., Yeom, G.Y.

2. Effect of an Atmospheric Pressure Plasma Cleaning on the Outgassing Characteristics of MgO Layer for Plasma Display Panel
Japanese Journal of Applied Physics, Part 2: Letters 42 (1 A/B) , pp. L74-L76
Song, B.K., Lee, Y.J., Yi, C.H., Hwang, H.K., Yeom, G.Y.

3. Etch damage evaluation of low-angle, forward-reflected neutral beam etching
Materials Science and Engineering C 23 (1-2) , pp. 221-224
Lee, D.H., Chung, M.J., Hwang, H.K., Yeom, G.Y.

4. Characteristic of a dielectric barrier discharges using capillary dielectric and its application to photoresist etching
Surface and Coatings Technology 163-164 , pp. 723-727
Yi, C.H., Lee, Y.H., Kim, D.W., Yeom, G.Y.

5. The etching mechanism of (Zr0.8Sn0.2)TiO4(ZST) film by using Cl2/O2-gas plasma
Journal of the Korean Physical Society 42 (SUPPL.2) , pp. S809-S813
Kwon, K.H., Efremov, A.M., Yeom, G.Y., Kang, Y.I.

6. High rate sapphire etching using BCl3-based inductively coupled plasma
Journal of the Korean Physical Society 42 (SUPPL.2) , pp. S795-S799
Kim, D.W., Jeong, C.H., Kim, K.N., Lee, H.Y., Kim, H.S., Yeom, G.Y., Sung, Y.J.

7. Effect of additive gases on the selective etching of tungsten films using inductively coupled halogen-based plasmas
Journal of the Korean Physical Society 42 (SUPPL.2) , pp. S804-S808
Park, S.D., Lee, Y.J., Yeom, G.Y., Kim, S.G., Choe, H.H., Hong, M.P.

8. Effect of N-based Gases to C3F8/O2 on Global Warming during Silicon Nitride PECVD Chamber Cleaning Using a Remote Plasma Source
Journal of the Korean Physical Society 42 (SUPPL.2) , pp. S800-S803
Kim, J.H., Oh, C.H., Lee, N.-E., Yeom, G.Y.
9. A study of GaN etching characteristics using HBr-based inductively coupled plasmas
Solid-State Electronics 47 (3) , pp. 549-552
Kim, D.W., Jeong, C.H., Lee, H.Y., Kim, H.S., Sung, Y.J., Yeom, G.Y.

10. High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas
Japanese Journal of Applied Physics, Part 2: Letters 42 (5 B) , pp. L535-L537
Bae, J.W., Jeong, C.H., Kim, H.K., Kim, K.K., Cho, N.G., Seong, T.Y., Park, S.J., (...), Yeom

11. The study of atmospheric pressure plasma for surface cleaning
Surface and Coatings Technology 171 (1-3) , pp. 237-240
Yi, C.H., Lee, Y.H., Yeom, G.Y.

12. Linear internal inductively coupled plasma (ICP) source with magnetic fields for large area processing
Thin Solid Films 435 (1-2) , pp. 275-279
Lee, Y.J., Kim, K.N., Song, B.K., Yeom, G.Y.

13. Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8-O2-Ar chemistry
Surface and Coatings Technology 171 (1-3) , pp. 267-272
Oh, C.H., Lee, N.E., Kim, J.H., Yeom, G.Y., Yoon, S.S., Kwon, T.K.

14. Increase of cleaning rate and reduction in global warming effect during C4F8O/O2 remote plasma cleaning of silicon nitride by adding NO and N2O
Thin Solid Films 435 (1-2) , pp. 264-269
Oh, C.H., Lee, N.E., Kim, J.H., Yeom, G.Y., Yoon, S.S., Kwon, T.K.

15. High rate sapphire (Al2O3) etching in inductively coupled plasmas using axial external magnetic field
Thin Solid Films 435 (1-2) , pp. 242-246
Kim, D.W., Jeong, C.H., Kim, K.N., Lee, H.Y., Kim, H.S., Sung, Y.J., Yeom, G.Y.

16. Diagnostics of neutral species in the low-angle forward-reflected neutral beam etching system
Surface and Coatings Technology 171 (1-3) , pp. 231-236
Chung, M.J., Lee, D.H., Yeom, G.Y.

17. Influence of substrate temperature on the etching of silver films using inductively coupled Cl2-based plasmas
Surface and Coatings Technology 171 (1-3) , pp. 285-289
Park, S.D., Lee, Y.J., Kim, S.G., Choe, H.H., Hong, M.P., Yeom, G.Y.

18. Sapphire etching with BCl3/HBr/Ar plasma
Surface and Coatings Technology 171 (1-3) , pp. 280-284
Jeong, C.H., Kim, D.W., Lee, H.Y., Kim, H.S., Sung, Y.J., Yeom, G.Y.

19. The characteristics of large area processing plasmas
IEEE Transactions on Plasma Science 31 (4 II) , pp. 628-637
Park, S.E., Cho, B.U., Lee, J.K., Lee, Y.J., Yeom, G.Y.

20. Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme
Applied Physics Letters 83 (11) , pp. 2121-2123
Park, S.H., Kim, J., Jeon, H., Sakong, T., Lee, S.N., Chae, S., Park, Y., (...), Cho, Y.H.

21. Etch characteristics of silver by inductively coupled fluorine-based plasmas
Thin Solid Films 445 (1) , pp. 138-143
Park, S.D., Lee, Y.J., Kim, S.G., Choe, H.H., Hong, M.P., Yeom, G.Y.

22. Characteristics of neutral beam generated by reflection on a planar-type reflector and its etching properties
Surface and Coatings Technology xx (2003) xxx–xxx
D.H. Lee, S.J. Jung, S.D. Park, G.Y. Yeom

23. Effect of plasma cleanings on the characteristics of MgO layer for plasma display panel
Surface and Coatings Technology xx (2003) xxx–xxx
H.K. Hwang, C.H. Jeong, Y.J. Lee, Y.W. Ko, G.Y. Yeom

24. Effects of Additive Gases on Ag Etching Using Inductively Coupled Cl2-Based Plasmas
Journal of the Korean Physical Society, Vol. 42, February 2003, pp. S804~S808
S. D. Park, Y. J. Lee and G. Y. Yeom, S. G. Kim, H. H. Choe and M. P. Hong

25. Effects of multipolar magnetic fields on the characteristics of plasma and photoresist etching in an internal linear inductively coupled plasma system
Surface and Coatings Technology xx (2003) xxx–xxx
K.N. Kim, Y.J. Lee, S.J. Kyong, G.Y. Yeom

26. High rate etching of 6H–SiC in SF6-based magnetically-enhanced inductively coupled plasmas
Thin Solid Films xx (2003) xxx–xxx
D.W. Kim, H.Y. Lee, B.J. Park, H.S. Kim, Y.J. Sung, S.H. Chae, Y.W. Ko, G.Y. Yeom

27. Internal linear inductively coupled plasma (ICP) sources for large area FPD etch process applications
Materials Science in Semiconductor Processing 5 (2003) 419–423
Y.J. Lee, K.N. Kim, B.K. Song, G.Y. Yeom

28. Oxide surface cleaning by an atmospheric pressure plasma
Surface and Coatings Technology xx (2003) xxx–xxx
Chang Heon Yi, Chang Hyun Jeong, Yong Hyuk Lee, Young Wook Ko, Geun Young Yeom

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[2002]

1. Particle-in-cell simulation of a neutral beam source for materials processing
IEEE Transactions on Plasma Science 30 (1 I) , pp. 110-111
Min Sup Hur, Sung Jin Kim, Ho Seung Lee, Jae Koo Lee, and Geun-Young Yeom

2. Surface Properties of GaN Fabricated by Laser Lift-Off and ICP Etching
Journal of the Korean Physical Society 40 (4) , pp. 567-571
Kim, H.S., Dawson, M.D., Yeom, G.Y.

3. Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasma
Materials Science and Engineering B: Solid-State Materials for Advanced Technology 93 (1-3) , pp. 60
Jeong, C.H., Kim, D.W., Bae, J.W., Sung, Y.J., Kwak, J.S., Park, Y.J., Yeom, G.Y.

4. Effects of Tin Concentration on the Electrical Properties of Room-Temperature Ion-Beam-Assisted-Evaporation-Deposited Indium Oxide Thin Films
Japanese Journal of Applied Physics, Part 2: Letters 41 (9 A/B) , pp. L999-L1001
Bae, J.W., Park, S.D., Cho, N.G., Lee, D.H., Yeom, G.Y.

5.A study of sapphire etching characteristics using BCl3-based inductively coupled plasmas
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (10)
Jeong, C.H., Kim, D.W., Kim, K.N., Yeom, G.Y.

6. C4F8O/O2/N-based Additive Gases for Silicon Nitride Plasma Enhanced Chemical Vapor Deposition Chamber Cleaning with Low Global Warming Potentials
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (11)
Kim, J.H., Bae, J.W., Oh, C.H., Kim, K.J., Lee, N.E., Yeom, G.Y.
7. Damage during SiO2 etching by low-angle forward reflected neutral beam
Japanese Journal of Applied Physics, Part 2: Letters 41 (12 A) , pp. L1412-L1415
Lee, D., Chung, M., Park, S., Yeom, G.

8. Study on the low-angle forward-reflected neutral beam etching system for SiO2 etching
Thin Solid Films 420-421 , pp. 579-583
Chung, M.J., Lee, D.H., Yeom, G.Y.

9. Effect of N2O to C4F8/O2 on GlobalWarming during Silicon Nitride Plasma Enhanced Chemical Vapor Deposition (PECVD) Chamber Cleaning Using a Remote Inductively Coupled Plasma Source
Jpn. J. Appl. Phys. Vol. 41 (2002) pp. L 1495–L 1498
Ji Hwang KIM, Chang Hyun OH, Nae Eung LEE and Geun Young YEOM

10. Effect of microstructures on the coercivity of Fe1-xBx
Vacuum 67 (2002) 185–189
Hyoun-Soo Shin, Jong-Wook Hong, Taesuk Jang, Eui-Park Yoon,Insoo Kim, Geun-Young Yeum, Jong-Wan Park

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[2001]

1. The Effects of surface terminal bonds and microstructure of SiO2 aerogel films on dry etching
Applied Surface Science 169-170 , pp. 457-462
Wang, S. J., Park, H. H., Yeom, G. Y., Hyun, S. H.

2. Dry etching characteristics of ITO thin films deposited on plastic substrates
Thin Solid Films 383 (1-2) , pp. 281-283
Lee, Y.J., Bae, J.W., Han, H.R., Kim, J.S., Yeom, G.Y.

3. Characterization of an oxygen plasma by using a Langmuir probe in an inductively coupled plasma
Journal of the Korean Physical Society 38 (3) , pp. 259-263
Kim, J.S., Kim, G.H., Chung, T.H., Yeom, G.Y., Kwon, K.H.

4. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials
Bae, J.W, Kim, J.S, Yeom, G.Y

5. Etch end-point detection of GaN-based devices using optical emission spectroscopy
Materials Science and Engineering B: Solid-State Materials for Advanced Technology 82 (1-3) , pp. 15
kim, H.S., Sung, Y.J., Kim, D.W., Kim, T., Dawson, M.D., Yeom, G.Y.

6. High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas
Materials Science and Engineering B: Solid-State Materials for Advanced Technology 82 (1-3) , pp. 50
Sung, Y.J., Kim, H.S., Lee, Y.H., Lee, J.W., Chae, S.H., Park, Y.J., Yeom, G.Y.

7. Investigation of the outgassing characteristics of the materials comprising a plasma display panel
Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films 19 (4) , pp. 1099-1104
Han, H.R., Lee, Y.J., Yeom, G.Y.

8. Refractive sapphire microlenses fabricated by chlorine-based inductively coupled plasma etching
Applied Optics 40 (22) , pp. 3698-3702
Park, S.H., Jeon, H., Sung, Y.J., Yeom, G.Y.

9. Effect of O2(CO2)/C4F8O gas combinations on global warming gas emission in silicon nitride PECVD plasma cleaning
Surface and Coatings Technology 146-147 , pp. 522-527
Oh, B.H., Bae, J.W., Kim, J.H., Kim, K.J., Ahn, Y.S., Lee, N.E., Yeom, G.Y., (...), Cho, D.H.

10. Characteristics of He/O2 atmospheric pressure glow discharge and its dry etching properties of organic materials
Surface and Coatings Technology 146-147 , pp. 474-479
Lee, Y.-H., Yi, C.-H., Chung, M.-J., Yeom, G.-Y.

11. A study of transparent indium tin oxide (ITO) contact to p-GaN
Thin Solid Films 398-399 , pp. 87-92
Kim, D.W., Sung, Y.J., Park, J.W., Yeom, G.Y.

12. Development of a low angle forward reflected neutral oxygen beam for materials processing
Thin Solid Films 398-399 , pp. 647-651
Lee, D.H., Bae, J.W., Park, S.D., Yeom, G.Y.

13. Etch characteristics of SrBi2Ta2O9 (SBT) thin films using magnetized inductively coupled plasmas
Thin Solid Films 398-399 , pp. 652-656
Lee, Y.-J., Jeong, C.-H., Bae, J.-W., You, I.-K., Park, J.-W., Yeom, G.-Y.

14. Fabrication and properties of microcantilever using piezoelectric PZT thin films Ferroelectrics 263 (1) , pp. 241-246
Ahn, J., Kim, D., Yeom, G., Yoo, J., Lee, J.

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[2000]

1. Effects of oxygen ion beam plasma conditions on the properties of indium tin oxide thin films
Vacuum 56 (1) , pp. 77-81
Bae, J.W., Kim, H.J., Kim, J.S., Lee, N.E., Yeom, G.Y.

2. Effects of plasma conditions on the etch properties of AlGaN
Vacuum 56 (1) , pp. 45-49
Kim, H.S., Lee, D.H., Lee, J.W., Kim, T.I., Yeom, G.Y.

3. Etch characteristics of Pt using Cl2/Ar/O2 gas mixtures
Journal of the Electrochemical Society 147 (5) , pp. 1807-1809
Kwon, K.H., Kang, S.Y., Yeom, G.Y., Hong, N.K., Lee, J.H.

4. Characterization of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering for a Combustion Control Oxygen Sensor
Journal of the Electrochemical Society 147 (6) , pp. 2380-2384
Bae, J.W., Park, J.Y., Hwang, S.W., Yeom, G.Y., Kim, K.D., Cho, Y.A., Jeon, J.S., Choi, D.

5. Etching mechanism of (Ba, Sr)TiO3 films in high density Cl2/BCl3/Ar plasma
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 18 (4 I) , pp. 1381-1384
Kim, S.B., Lee, Y.H., Kim, T.H., Yeom, G.Y., Kim, C.I.

6. Etching characteristics of SrBi2Ta2O9 film with Ar/CHF3 plasma
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 18 (4 I) , pp. 1354-1358
Seo, J.W., Lee, D.H., Lee, W.J., Yu, B.G., Kwon, K.H., Yeom, G.Y., Chang, E.G., Kim, C.I.

7. Effects of BCl3 addition on Ar/Cl2 gas in inductively coupled plasmas for lead zirconate titanate et
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 18 (4 I) , pp. 1373-1376
An, T.H., Park, J.Y., Yeom, G.Y., Chang, E.G., Kim, C.I.

8. Roles of N2 gas in etching of platinum by inductively coupled Ar/Cl2/N2 plasmas
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 18 (4 I) , pp. 1377-1380
Ryu, J.H., Kim, N.H., Kim, H.S., Yeom, G.Y., Chang, E.G., Kim, C.I.

9. Magnetized inductively coupled plasma etching of GaN in Cl2/BCl3 plasmas
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 18 (4 I) , pp. 1390-1394
Lee, Y.H., Sung, Y.J., Yeom, G.Y., Lee, J.W., Kim, T.I.

10. Dry etch characteristics of Al-Nd films for TFT-LCD
Surface and Coatings Technology 133-134 , pp. 606-611
Han, H.R., Lee, Y.J., Yeom, G.Y., Oh, K.H., Hong, M.P.

11. Characteristics of magnetized inductively coupled plasma source for flat panel display applications
Surface and Coatings Technology 133-134 , pp. 612-616
Lee, Y.J., Han, H.R., Yeom, G.Y.

12. Fabrication of piezoelectrically driven micro-cantilever using Pb(Zr,Ti)O3 films
IEEE International Symposium on Applications of Ferroelectrics 2 , pp. 721-724
Ahn, J., Jun, S., Kim, D., Yeom, G.Y., Yoo, J.B., Lee, J., Sands, T.

13. Effects of H2 Addition in Magnetized Inductively Coupled C2F6 Plasma Etching of Silica Aerogel Film
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 39 (12)
Wang, S.J., Park, H.H., Yeom, G.Y.

14. Electrical, optical, and structural characteristics of ITO thin films by krypton and oxygen dual ion-beam assisted evaporation at room temperature
Thin Solid Films 377-378 , pp. 115-121
Kim, H.J., Bae, J.W., Kim, J.S., Kim, K.S., Jang, Y.C., Yeom, G.Y., Lee, N.-E.

15. Properties of amorphous tin-doped indium oxide thin films deposited by O2/Ar mixture ion beam-assisted system at room temperature
Surface and Coatings Technology 131 (1-3) , pp. 201-205
Kim, H.J., Bae, J.W., Kim, J.S., Kim, K.S., Jang, Y.C., Yeom, G.Y., Lee, N.-E.

16. Effects of oxygen radical on the properties of indium tin oxide thin films deposited at room temperature by oxygen ion beam assisted evaporation
Thin Solid Films 377-378 , pp. 103-108
Kim, J.S., Bae, J.W., Kim, H.J., Lee, N.-E., Yeom, G.Y., Oh, K.H.

17. A study on the etch characteristics of ITO thin film using inductively coupled plasmas
Surface and Coatings Technology 131 (1-3) , pp. 247-251
Park, J.Y., Kim, H.S., Lee, D.H., Kwon, K.H., Yeom, G.Y.

18. Tin-doped indium oxide thin film deposited on organic substrate using oxygen ion beam assisted deposition
Surface and Coatings Technology 131 (1-3) , pp. 196-200
Bae, J.W., Kim, H.J., Kim, J.S., Lee, Y.H., Lee, N.E., Yeom, G.Y., Ko, Y.W.

19. A study of lead zirconate titanate etching characteristics using magnetized inductively coupled plasmas
Surface and Coatings Technology 131 (2000) 257]260
Y.J. Lee, H.R. Han, J. Lee, G.Y. Yeom

20. Etching characteristics of lead magnesium niobate]lead titanate (PMN-PT) relaxor ferroelectrics
Surface and Coatings Technology 131 (2000) 252-256
J.W. Jang, Y.H. Lee, Y.J. Lee, J. Lee, G.Y. Yeom

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[1999]

1. Investigation of surface polymerization on silicon exposed to C4F8 helicon wave plasmas
Thin Solid Films 341 (1) , pp. 184-187
Lee, W.J., Kim, H.S., Yeom, G.Y., Baek, J.T.

2. A Study of GaN etch mechanisms using inductively coupled Cl2/Ar plasmas
Thin Solid Films 341 (1) , pp. 180-183
Kim, H.S., Yeom, G.Y., Lee, J.W., Kim, T.I.

3. Etch-induced damage in single crystal Si trench etching by planarinductively coupled Cl2/N2 and Cl2/HBr plasmas
Thin Solid Films 341 (1) , pp. 168-171
Lee, Y.J., Hwang, S.W., Yeom, G.Y., Lee, J.W., Lee, J.Y.

4. Effects of CdS substrates on the physical properties of polycrystalline CdTe films Thin Solid Films 341 (1) , pp. 172-175
Lee, Y.H., Lee, W.J., Kwon, Y.S., Yeom, G.Y., Yoon, J.K.

5. A study on the characteristics of inductively coupled plasma using multidipole magnets and its application to oxide etching
Thin Solid Films 341 (1) , pp. 176-179
An, K.J., Kim, H.S., Yoo, J.B., Yeom, G.Y.

6. Etch-Induced Physical Damage and Contamination during Highly Selective Oxide Etching Using C4F8/H2 Helicon Wave Plasmas
Journal of the Electrochemical Society 146 (4) , pp. 1517-1522
Kim, H.S., Lee, W.J., Yeom, G.Y., Kim, J.H., Whang, K.W.

7. Etch characteristics of optical waveguides using inductively coupled plasmas with multidipole magnet
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 17 (4) , pp. 1483-1487
An, K.J., Lee, D.H., Yoo, J.B., Lee, J., Yeom, G.Y.

8. Effects of variously configured magnets on the characteristics of inductively coupled plasmas
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 17 (4) , pp. 1211-1216
Hwang, S.W., Lee, Y.J., Han, H.R., Yoo, J.B., Yeom, G.Y.

9. Facet formation of a GaN-based device using chemically assisted ion beam etching with a photoresist mask
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 17 (4) , pp. 1230-1234.
Lee, W.J., Kim, H.S., Yeom, G.Y., Lee, J.W., Kim, T.I.

10. Effect of CaO addition on the firing voltage of MgO films in AC plasma display panels
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 17 (4) , pp. 1230-1234
Cho, J., Kim, R., Lee, K.W., Yeom, G.Y., Kim, J.Y., Park, J.W.

11. Low-voltage characteristics of MgO-CaO films as a protective layer for AC plasma display panels by e-beam evaporation
Journal of Materials Science 34 (20) , pp. 5055-5059
Cho, J., Kim, R., Lee, K.W., Son, C., Yeom, G.Y., Kim, H.J., Kim, J.Y., Park, J.W.

12. Study on surface reaction of (Ba,Sr)TiO3 thin films by high density plasma etching
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 17 (4) , pp. 2156-2162
Kim, S.B., Kim, C.I., Chang, E.G., Yeom, G.Y.

13. Characteristics of inductively coupled Cl2/BCl3 plasmas during GaN etching
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 17 (4) , pp. 2214-2219
Kim, H.S., Yeom, G.Y., Lee, J.W., Kim, T.I.

14. Effects of etch-induced damage and contamination on the physical and electrical properties of cobalt silicides
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 (10)
Kim, H.S., Yoon, J.K., Lee, Y.H., YoungWook, K.O., Park, J.W., Yeom, G.Y.

15. Thermal stability enhancement of Cu/WN/SiOF/Si multilayers by post-plasma treatment of fluorine-doped silicon dioxide
Journal of Applied Physics 85 (1) , pp. 473-477
S.H Lee, D.J Kim, S.H Yang, J.W Park and Seil Sohn, K.H Oh, Y.T Kim, J.Y Kim, G.Y Yeom, J.W Park

16. Tin oxide films deposited by ozone-assisted thermal chemical vapor deposition Journal of Applied Physics 85 (1) , pp. 473-477
Bae, J.W., Lee, S.W., Song, K.H., Park, J.I., Park, K.J., Ko, Y.W., Yeom, G.Y.

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[1998]

1. Etching properties of Pt thin films by inductively coupled plasma
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 16 (5) , pp. 2772-2776
Kwon, K.H., Kim, C.I., Yun, S.J., Yeom, G.Y.

2. Effect of O2 plasma treatment on the properties of SiO2 aerogel film
Thin Solid Films 332 (1-2) , pp. 444-448
Kim, H.R., Park, H.H., Hyun, S.H., Yeom, G.Y.

3. Etch properties of gallium nitride using chemically assisted ion beam etching (CAIBE)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 (12)
Lee, W.J., Kim, H.S., Lee, J.W., Kim, T.I., Yeom, G.Y.

4. Etching of platinum thin films by high density Ar/Cl2/HBr plasma
Materials Research Society Symposium - Proceedings 514 , pp. 357-362
Kim, C.I., Kim, N.H., Chang, E.G., Kwon, K.H., Yeom, G.Y., Seo, Y.J

5. Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 16 (3) , pp. 1478-1482
Lee, Y.H., Kim, H.S., Yeom, G.Y., Lee, J.W., Yoo, M.C., Kim, T.I.

6. A preliminary study on the etching behavior of SiO2 aerogel film with CHF3 gas Journal of the Korean Physical Society 33 (SUPPL. 2) , pp. S135-S137
Wang, S.J., Park, H.H., Yeom, G.Y.

7. Effects of post annealing and oxidation processes on the removal of damage generated during the shallow trench etch process
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 (12)
Lee, Y.J., Hwang, S.W., Oho, K.H., Lee, J.Y., Yeom, G.Y.